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CSD17382F4T

Texas Instruments

CSD17382F4T by Texas Instruments

CSD17382F4T by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.18 ohm RDS(on), and 2.3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring a built-in diode and resistor in a CHIP CARRIER package.

Median Price

$1.060

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 128,724 parts In-Stock

1+ parts

$0.788

100+ parts

$0.510

1k+ parts

$0.255

10k+ parts

-

128,724

$0.788

$0.510

$0.255

-

Chip1Stop

Japan . 200 parts In-Stock

1+ parts

$1.060

100+ parts

$0.396

1k+ parts

$0.289

10k+ parts

-

200

$1.060

$0.396

$0.289

-

DigiKey

USA . 3,149 parts In-Stock

1+ parts

$1.400

100+ parts

$0.586

1k+ parts

$0.433

10k+ parts

$0.337

3,149

$1.400

$0.586

$0.433

$0.337

Mouser Electronics

USA . 928 parts In-Stock

1+ parts

$1.400

100+ parts

$0.508

1k+ parts

$0.388

10k+ parts

$0.368

928

$1.400

$0.508

$0.388

$0.368

Arrow

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.313

10k+ parts

-

250

-

-

$0.313

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.419

-

-

-

Digiode

USA . 3,028 parts In-Stock

1+ parts

$0.749

100+ parts

-

1k+ parts

-

10k+ parts

-

3,028

$0.749

-

-

-

Chip Stock

USA . 41,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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41,500

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-

-

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Vyrian

USA . 27,552 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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27,552

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 27,558 parts In-Stock

1+ parts

$0.253

100+ parts

-

1k+ parts

-

10k+ parts

-

27,558

$0.253

-

-

-

Continental Prestige Electronics

USA . 2,634 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

-

10k+ parts

$0.411

2,634

$0.419

-

-

$0.411

Argo Parts USA

USA . 171 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

-

10k+ parts

$0.406

171

$0.419

-

-

$0.406

Corphita

USA . 2,072 parts In-Stock

1+ parts

$0.709

100+ parts

-

1k+ parts

-

10k+ parts

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2,072

$0.709

-

-

-

Corohmni

South Africa . 109 parts In-Stock

1+ parts

$0.818

100+ parts

-

1k+ parts

-

10k+ parts

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109

$0.818

-

-

-

Parana Technologies

USA . 1,608 parts In-Stock

1+ parts

$1.173

100+ parts

-

1k+ parts

$1.979

10k+ parts

-

1,608

$1.173

-

$1.979

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DigiPath Technology Company

USA . 481 parts In-Stock

1+ parts

$1.292

100+ parts

$1.188

1k+ parts

-

10k+ parts

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481

$1.292

$1.188

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-

IDEA Electronic Components Group

UK . 2,084 parts In-Stock

1+ parts

$1.318

100+ parts

-

1k+ parts

$1.186

10k+ parts

-

2,084

$1.318

-

$1.186

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ChromeModa Solutions

Germany . 994 parts In-Stock

1+ parts

$1.318

100+ parts

$1.081

1k+ parts

-

10k+ parts

-

994

$1.318

$1.081

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-

Perfect Parts

USA . 6,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,440

-

-

-

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Lixinc

USA . 2,480 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,480

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-

-

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.411

1k+ parts

$0.398

10k+ parts

$0.390

100

-

$0.411

$0.398

$0.390

Overview

Discover the high-quality CSD17382F4T from Texas Instruments, a top-tier manufacturer known for excellence in electronic components. This N-CHANNEL small signal field effect transistor with a built-in diode and resistor is perfect for switching applications. With a maximum drain current of 2.3A and a low on-resistance of 0.18 ohm, this chip carrier package offers unparalleled performance and reliability. Take your projects to the next level with the CSD17382F4T - the perfect solution for your circuit needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have higher electron mobility and faster switching speeds compared to P-channel FETs, making them suitable for high frequency applications.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, this FET can handle a wide range of voltage levels, providing flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Having a built-in diode and resistor simplifies the circuit design and saves space on the PCB, making it more efficient.

Maximum Drain Current (ID): 2.3 A

The high maximum drain current allows this FET to handle larger loads, making it suitable for high-power switching applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally off devices and require a positive voltage on the gate to turn them on, providing better control over the switching operation.

Maximum Drain-Source On Resistance: 0.18 ohm

The low on-resistance of 0.18 ohm results in minimal power loss and heat generation, making the FET highly efficient.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this FET can handle moderate power levels without overheating, ensuring reliable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD17382F4T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2.3 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

19.5 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD17382F4T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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