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CSD13385F5T

Texas Instruments

CSD13385F5T by Texas Instruments

CSD13385F5T by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.023 ohm RDS(on), and 4.3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring a built-in diode and resistor in a CHIP CARRIER package.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 39 parts In-Stock

1+ parts

$0.075

100+ parts

$0.072

1k+ parts

-

10k+ parts

-

39

$0.075

$0.072

-

-

Newark

USA . 2,440 parts In-Stock

1+ parts

$0.440

100+ parts

$0.223

1k+ parts

-

10k+ parts

-

2,440

$0.440

$0.223

-

-

Element14

Singapore . 2,440 parts In-Stock

1+ parts

$0.775

100+ parts

$0.494

1k+ parts

-

10k+ parts

-

2,440

$0.775

$0.494

-

-

Texas Instruments

USA . 76,305 parts In-Stock

1+ parts

$0.806

100+ parts

$0.548

1k+ parts

$0.281

10k+ parts

-

76,305

$0.806

$0.548

$0.281

-

Mouser Electronics

USA . 555 parts In-Stock

1+ parts

$1.500

100+ parts

$0.545

1k+ parts

-

10k+ parts

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555

$1.500

$0.545

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-

DigiKey

USA . 20,690 parts In-Stock

1+ parts

$1.600

100+ parts

$0.672

1k+ parts

$0.499

10k+ parts

$0.430

20,690

$1.600

$0.672

$0.499

$0.430

Farnell

UK . 2,440 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

$0.114

10k+ parts

$0.106

2,440

-

$0.173

$0.114

$0.106

Verical

USA . 39 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

-

10k+ parts

-

39

-

$0.072

-

-

Chip1Stop

Japan . 39 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

-

10k+ parts

-

39

-

$0.383

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,005 parts In-Stock

1+ parts

$0.267

100+ parts

-

1k+ parts

-

10k+ parts

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2,005

$0.267

-

-

-

Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$0.521

100+ parts

-

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54

$0.521

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Vyrian

USA . 18,132 parts In-Stock

1+ parts

-

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18,132

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-

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PC Components Company LLC

USA . 500 parts In-Stock

1+ parts

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500

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Bristol Electronics

USA . 500 parts In-Stock

1+ parts

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500

-

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Semi Source

USA . 18 parts In-Stock

1+ parts

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 17,974 parts In-Stock

1+ parts

$0.231

100+ parts

-

1k+ parts

-

10k+ parts

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17,974

$0.231

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Corphita

USA . 1,629 parts In-Stock

1+ parts

$0.253

100+ parts

-

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10k+ parts

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1,629

$0.253

-

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Continental Prestige Electronics

USA . 2,440 parts In-Stock

1+ parts

$0.325

100+ parts

$0.173

1k+ parts

$0.114

10k+ parts

-

2,440

$0.325

$0.173

$0.114

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Parana Technologies

USA . 1,976 parts In-Stock

1+ parts

$0.411

100+ parts

$38.184

1k+ parts

$0.370

10k+ parts

-

1,976

$0.411

$38.184

$0.370

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DigiPath Technology Company

USA . 1,520 parts In-Stock

1+ parts

$0.453

100+ parts

-

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-

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1,520

$0.453

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ChromeModa Solutions

Germany . 6,175 parts In-Stock

1+ parts

$0.462

100+ parts

$0.379

1k+ parts

-

10k+ parts

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6,175

$0.462

$0.379

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IDEA Electronic Components Group

UK . 1,463 parts In-Stock

1+ parts

$0.462

100+ parts

-

1k+ parts

$0.416

10k+ parts

-

1,463

$0.462

-

$0.416

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Argo Parts USA

USA . 3,626 parts In-Stock

1+ parts

$0.521

100+ parts

-

1k+ parts

-

10k+ parts

$0.505

3,626

$0.521

-

-

$0.505

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.521

100+ parts

-

1k+ parts

$0.495

10k+ parts

$0.485

100

$0.521

-

$0.495

$0.485

Perfect Parts

USA . 6,160 parts In-Stock

1+ parts

-

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6,160

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Overview

Experience the power of Texas Instruments with the CSD13385F5T small signal field-effect transistor. This N-CHANNEL transistor offers reliable performance in switching applications, thanks to its single design with a built-in diode and resistor. With a maximum drain current of 4.3A and a low on-resistance of 0.023 ohm, this transistor provides efficient operation in a compact chip carrier package. Trust in Texas Instruments for high-quality semiconductor technology that delivers exceptional value and performance to meet your electronic needs. Elevate your designs with the CSD13385F5T and experience the difference TI can make in your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, allowing for faster switching speeds and lower resistance, making them a good choice for high-speed switching applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors only conduct when a voltage is applied to the gate, providing better control and efficiency in switching operations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand higher temperatures without compromising performance, making it suitable for applications in demanding environments.

Maximum Drain Current (ID): 4.3 A

The high maximum drain current allows for handling larger currents, making this transistor suitable for applications with higher power requirements.

Maximum Drain-Source On Resistance: 0.023 ohm

The low on-resistance of the transistor results in reduced power losses and improved efficiency in switching operations, making it a good choice for high-performance applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD13385F5T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

38 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD13385F5T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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