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CSD13381F4

Texas Instruments

CSD13381F4 by Texas Instruments

CSD13381F4 by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage and 7A IDM. Ideal for applications requiring high power dissipation, it operates in Enhancement Mode with a max temperature of 150°C.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 350 parts In-Stock

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$0.107

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$0.099

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350

$0.107

$0.099

$0.093

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Arrow

USA . 459 parts In-Stock

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$0.228

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$0.077

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$0.048

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459

$0.228

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$0.048

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Mouser Electronics

USA . 2,768 parts In-Stock

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$0.360

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$0.141

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$0.083

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2,768

$0.360

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$0.083

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DigiKey

USA . 319,648 parts In-Stock

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$0.390

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$0.150

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$0.071

319,648

$0.390

$0.150

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$0.071

Chip1Stop

Japan . 2,705 parts In-Stock

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$0.097

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$0.073

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Verical

USA . 654 parts In-Stock

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$0.061

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$0.061

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Distributors (In-Stock)

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Maritex

Poland . 339 parts In-Stock

1+ parts

$0.071

100+ parts

$0.036

1k+ parts

$0.033

10k+ parts

$0.029

339

$0.071

$0.036

$0.033

$0.029

Nova Conductors

Japan . 500 parts In-Stock

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$0.093

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500

$0.093

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Digiode

USA . 1,091 parts In-Stock

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$0.102

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1,091

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Chip Stock

USA . 718,895 parts In-Stock

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Cyclops Electronics Ltd

UK . 259,311 parts In-Stock

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Vyrian

USA . 83,590 parts In-Stock

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Bristol Electronics

USA . 61,835 parts In-Stock

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TME

Poland . 24,000 parts In-Stock

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Prism Electronics

USA . 800 parts In-Stock

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Martec Srl

Italy . 118 parts In-Stock

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Semtec, LLC

USA . 63 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 82,166 parts In-Stock

1+ parts

$0.052

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$0.052

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Semicontronic

India . 82,016 parts In-Stock

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$0.052

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$0.051

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$0.050

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82,016

$0.052

$0.051

$0.050

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Continental Prestige Electronics

USA . 1,161 parts In-Stock

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$0.093

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$0.091

1,161

$0.093

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$0.091

Argo Parts USA

USA . 1,041 parts In-Stock

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$0.093

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$0.090

1,041

$0.093

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$0.090

Corphita

USA . 189 parts In-Stock

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$0.096

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189

$0.096

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.107

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$0.099

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$0.093

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350

$0.107

$0.099

$0.093

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Corohmni

South Africa . 56 parts In-Stock

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$0.444

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56

$0.444

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Parana Technologies

USA . 908 parts In-Stock

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$0.535

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$1.644

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908

$0.535

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$1.644

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DigiPath Technology Company

USA . 521 parts In-Stock

1+ parts

$0.589

100+ parts

$0.542

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521

$0.589

$0.542

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ChromeModa Solutions

Germany . 6,256 parts In-Stock

1+ parts

$0.601

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$0.493

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6,256

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IDEA Electronic Components Group

UK . 1,958 parts In-Stock

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$0.601

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$0.541

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Formix International (Excess)

India . 226,794 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

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Technoshack Inc. (Excess)

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Assy Fe

Spain . 8,941 parts In-Stock

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GreenTree Electronics

Israel . 5,910 parts In-Stock

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Futuretech Components

Singapore . 5,890 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,932 parts In-Stock

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Lixinc

USA . 4,010 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,288 parts In-Stock

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Authorized Procurement Solutions

USA . 2,952 parts In-Stock

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ChipstoGo Electronic ltd

UK . 1,350 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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$0.365

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$0.365

100

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$0.365

Lucentia Tech

USA . 100 parts In-Stock

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$0.365

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$0.365

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$0.365

100

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$0.365

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$0.365

Overview

Experience superior performance and reliability with the CSD13381F4 by Texas Instruments, a top-quality small signal Field Effect Transistor. Manufactured by industry leader Texas Instruments, this N-CHANNEL transistor offers single configuration and operates in enhancement mode, making it perfect for a wide range of applications. With a maximum pulsed drain current of 7A and a peak reflow temperature of 260°C, this transistor delivers unmatched power and efficiency. Trust Texas Instruments for cutting-edge technology and elevate your electronics to the next level with the CSD13381F4.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

This transistor's N-channel design allows for efficient use in a variety of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Being surface mount enables easy installation on PCBs, saving space and improving efficiency.

Minimum DS Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12V, this transistor offers reliable performance in low voltage applications.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy mounting and compatibility with standard layouts.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control and modulation of the transistor's characteristics.

Maximum Pulsed Drain Current (IDM): 7 A

The high pulsed drain current rating of 7A makes this transistor suitable for applications requiring short bursts of high current.

Maximum Drain Current (Abs) (ID): 2.1 A

With a maximum drain current of 2.1A, this transistor can handle moderate current loads effectively.

Maximum Power Dissipation (Abs): 0.5 W

The low power dissipation of 0.5W helps in minimizing heat generation and improving overall efficiency.

Package Style (Meter): GRID ARRAY

The grid array package style provides excellent thermal characteristics and mechanical stability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high efficiency and reliability in signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor is suitable for a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

The wide temperature range of -55°C to 150°C ensures reliable performance in both extreme cold and hot environments.

Terminal Finish: NICKEL GOLD

The nickel gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and ensures easy soldering and connection.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature allows for safe and reliable soldering process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without damage.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD13381F4 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XBGA-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

7 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CSD13381F4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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