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CSD13380F3T

Texas Instruments

CSD13380F3T by Texas Instruments

CSD13380F3T by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2.1A ID, 0.092 ohm RDS(on), and 12.5pF Crss. Operating range from -55 to 150 °C, with ENHANCEMENT MODE and SINGLE configuration for efficient performance in various electronic devices.

Median Price

$0.735

Lifecycle Status

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12

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1k+

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Texas Instruments

USA . 203,792 parts In-Stock

1+ parts

$0.735

100+ parts

$0.476

1k+ parts

$0.238

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203,792

$0.735

$0.476

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Mouser Electronics

USA . 52,301 parts In-Stock

1+ parts

$1.330

100+ parts

$0.480

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$0.409

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52,301

$1.330

$0.480

$0.409

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DigiKey

USA . 21,377 parts In-Stock

1+ parts

$1.330

100+ parts

$0.556

1k+ parts

$0.410

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$0.318

21,377

$1.330

$0.556

$0.410

$0.318

Chip1Stop

Japan . 267 parts In-Stock

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$0.346

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$0.336

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267

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Verical

USA . 217 parts In-Stock

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$0.308

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Digiode

USA . 2,919 parts In-Stock

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$0.560

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Nova Conductors

Japan . 300 parts In-Stock

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$0.598

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$0.598

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Chip Stock

USA . 129,300 parts In-Stock

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Vyrian

USA . 58,904 parts In-Stock

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Semtec, LLC

USA . 19,940 parts In-Stock

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Netsource Technology, Inc.

USA . 4,147 parts In-Stock

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Bristol Electronics

USA . 631 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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$0.388

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Corphita

USA . 1,523 parts In-Stock

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$0.531

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$0.531

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Ampacity Inc.

Singapore . 58,527 parts In-Stock

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$0.570

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Continental Prestige Electronics

USA . 3,976 parts In-Stock

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$0.592

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$0.580

3,976

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Argo Parts USA

USA . 1,598 parts In-Stock

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$0.592

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$0.574

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Parana Technologies

USA . 593 parts In-Stock

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$1.011

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$1.887

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593

$1.011

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DigiPath Technology Company

USA . 751 parts In-Stock

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$1.113

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$1.024

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IDEA Electronic Components Group

UK . 2,333 parts In-Stock

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$1.022

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ChromeModa Solutions

Germany . 1,294 parts In-Stock

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$1.136

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$0.932

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 13,759 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Metaverse IC Inc.

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Overview

Enhance your electronic projects with the high-quality CSD13380F3T by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers top-notch Small Signal Field Effect Transistors that are perfect for switching applications. With a single configuration that includes a built-in diode and resistor, this N-CHANNEL transistor provides reliable performance. Its compact package and surface mount design make it easy to integrate into various designs. Trust Texas Instruments to deliver exceptional value and superior benefits with the CSD13380F3T, ensuring efficiency and effectiveness in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and resistance to external elements, making the transistor suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel type transistors typically have lower ON resistance and higher switching speeds, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Built-in diode and resistor simplify circuit design and save space, making the product more convenient to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in tasks that require rapid switching on and off.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, reducing production costs and making installation simpler.

Minimum DS Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12 V, this transistor can handle a range of voltage levels, increasing its versatility in different circuits.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to work with, fitting well into standard PCB layouts and making it compatible with existing designs.

Terminal Form: BUTT

Butt terminals provide a secure and stable connection, reducing the risk of signal loss or damage to the transistor during operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer precise control over the switching process, resulting in more efficient performance and reduced power consumption.

No. of Terminals: 3

Having 3 terminals allows for easy interfacing with other components and simplifies circuit connections, enhancing overall system integration.

Package Style (Meter): GRID ARRAY

Grid array package style provides a compact and organized layout, optimizing space usage on the PCB and improving overall design aesthetics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology is known for its high reliability and low power consumption, making the transistor suitable for long-term use in energy-efficient applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures without sacrificing performance or reliability.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and electrical properties, ensuring stable and consistent transistor performance in various operating conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C allows the transistor to function reliably in cold environments or during temperature fluctuations.

Terminal Finish: NICKEL GOLD

Nickel gold terminal finish provides excellent conductivity and corrosion resistance, ensuring a reliable and long-lasting connection for the transistor.

Maximum Drain Current (ID): 2.1 A

High maximum drain current rating of 2.1 A allows the transistor to handle substantial current loads, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.092 ohm

Low drain-source on resistance of 0.092 ohms results in minimal power loss and heat generation during operation, leading to improved efficiency and performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy heat dissipation and PCB mounting, enhancing thermal management and overall system reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds minimizes the risk of thermal damage during soldering, ensuring the integrity of the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C allows for reliable and efficient soldering, ensuring proper connections and long-term performance.

Maximum Feedback Capacitance (Crss): 12.5 pF

Low feedback capacitance of 12.5 pF reduces the risk of signal distortion or interference, ensuring clean and accurate signal transmission in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD13380F3T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

2.1 A

Maximum Drain-Source On Resistance:

.092 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12.5 pF

JESD-30 Code:

R-PBGA-B3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

BUTT

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD13380F3T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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