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CSD18541F5T

Texas Instruments

CSD18541F5T by Texas Instruments

CSD18541F5T by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a built-in DIODE and RESISTOR, operates in ENHANCEMENT MODE, and has a max ID of 2.2A with 0.075 ohm RDS(on). Suitable for surface mount assembly, it can withstand temperatures from -55 to 150 °C.

Median Price

$1.465

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 250 parts In-Stock

1+ parts

$1.450

100+ parts

$0.528

1k+ parts

$0.501

10k+ parts

-

250

$1.450

$0.528

$0.501

-

DigiKey

USA . 17,861 parts In-Stock

1+ parts

$1.480

100+ parts

$0.621

1k+ parts

$0.461

10k+ parts

$0.360

17,861

$1.480

$0.621

$0.461

$0.360

Mouser Electronics

USA . 2,390 parts In-Stock

1+ parts

$1.480

100+ parts

$0.539

1k+ parts

$0.413

10k+ parts

$0.396

2,390

$1.480

$0.539

$0.413

$0.396

Arrow

USA . 3,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.327

10k+ parts

$0.322

3,250

-

-

$0.327

$0.322

Verical

USA . 95 parts In-Stock

1+ parts

-

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95

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.481

100+ parts

-

1k+ parts

-

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100

$0.481

-

-

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Digiode

USA . 3,540 parts In-Stock

1+ parts

$0.846

100+ parts

-

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-

10k+ parts

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3,540

$0.846

-

-

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Kruse Electronics AG

Switzerland . 487,750 parts In-Stock

1+ parts

-

100+ parts

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487,750

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Kruse

Germany . 487,750 parts In-Stock

1+ parts

-

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487,750

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Cyclops Electronics Ltd

UK . 18,250 parts In-Stock

1+ parts

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18,250

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Vyrian

USA . 5,641 parts In-Stock

1+ parts

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5,641

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,666 parts In-Stock

1+ parts

$0.304

100+ parts

-

1k+ parts

-

10k+ parts

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5,666

$0.304

-

-

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Continental Prestige Electronics

USA . 4,836 parts In-Stock

1+ parts

$0.481

100+ parts

-

1k+ parts

-

10k+ parts

$0.471

4,836

$0.481

-

-

$0.471

Argo Parts USA

USA . 3,104 parts In-Stock

1+ parts

$0.481

100+ parts

-

1k+ parts

-

10k+ parts

$0.466

3,104

$0.481

-

-

$0.466

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.481

100+ parts

-

1k+ parts

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10k+ parts

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2,000

$0.481

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Corphita

USA . 1,708 parts In-Stock

1+ parts

$0.801

100+ parts

-

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1,708

$0.801

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Corohmni

South Africa . 983 parts In-Stock

1+ parts

$0.872

100+ parts

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983

$0.872

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Parana Technologies

USA . 343 parts In-Stock

1+ parts

$1.303

100+ parts

-

1k+ parts

$2.052

10k+ parts

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343

$1.303

-

$2.052

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DigiPath Technology Company

USA . 517 parts In-Stock

1+ parts

$1.435

100+ parts

$1.320

1k+ parts

-

10k+ parts

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517

$1.435

$1.320

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ChromeModa Solutions

Germany . 5,946 parts In-Stock

1+ parts

$1.464

100+ parts

$1.200

1k+ parts

-

10k+ parts

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5,946

$1.464

$1.200

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IDEA Electronic Components Group

UK . 32 parts In-Stock

1+ parts

$1.464

100+ parts

-

1k+ parts

$1.318

10k+ parts

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32

$1.464

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$1.318

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GlobX GmbH

Germany . 509,782 parts In-Stock

1+ parts

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509,782

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Lixinc

USA . 10,204 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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A-Z Elektronik GmbH

Germany . 2,750 parts In-Stock

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2,750

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Overview

Discover the power of the CSD18541F5T by Texas Instruments, a high-quality N-CHANNEL Small Signal Field Effect Transistor designed for switching applications. With a single configuration featuring a built-in diode and resistor, this chip carrier package offers enhanced performance and reliability. Ideal for a wide range of electronic devices, this transistor boasts a low on-resistance of 0.075 ohm and a maximum drain current of 2.2 A, making it a valuable component for your next project. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and benefits to customers.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used for switching applications due to their high efficiency and fast switching speed.

Minimum DS Breakdown Voltage: 60 V

The high minimum breakdown voltage allows for reliable operation in circuits with higher voltages, increasing the versatility of the transistor.

Maximum Drain Current (ID): 2.2 A

With a high maximum drain current, this FET can handle higher power loads, making it suitable for a variety of applications.

Maximum Drain-Source On Resistance: 0.075 ohm

The low on-resistance of this FET results in lower power dissipation and improved efficiency in switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without sacrificing performance or reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD18541F5T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10.5 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD18541F5T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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