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CSD18541F5

Texas Instruments

CSD18541F5 by Texas Instruments

CSD18541F5 by Texas Instruments is a N-CHANNEL small signal FET with built-in diode and resistor. It is used for switching applications, has a min DS breakdown voltage of 60V, and can handle a max drain current of 2.2A.

Median Price

$0.520

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 27,884 parts In-Stock

1+ parts

$0.184

100+ parts

$0.125

1k+ parts

$0.064

10k+ parts

-

27,884

$0.184

$0.125

$0.064

-

DigiKey

USA . 12,516 parts In-Stock

1+ parts

$0.520

100+ parts

$0.203

1k+ parts

$0.136

10k+ parts

$0.100

12,516

$0.520

$0.203

$0.136

$0.100

Mouser Electronics

USA . 3,141 parts In-Stock

1+ parts

$0.520

100+ parts

$0.203

1k+ parts

$0.153

10k+ parts

-

3,141

$0.520

$0.203

$0.153

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.147

100+ parts

-

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700

$0.147

-

-

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Digiode

USA . 1,196 parts In-Stock

1+ parts

$0.175

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-

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1,196

$0.175

-

-

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Vyrian

USA . 11,394 parts In-Stock

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-

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11,394

-

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-

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SPM Sales

USA . 88 parts In-Stock

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88

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,799 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

3,799

$0.147

-

-

$0.144

Argo Parts USA

USA . 1,258 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

$0.143

1,258

$0.147

-

-

$0.143

Ampacity Inc.

Singapore . 11,554 parts In-Stock

1+ parts

$0.156

100+ parts

-

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11,554

$0.156

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Semicontronic

India . 11,157 parts In-Stock

1+ parts

$0.156

100+ parts

$0.152

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$0.151

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11,157

$0.156

$0.152

$0.151

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Corphita

USA . 442 parts In-Stock

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$0.166

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442

$0.166

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Corohmni

South Africa . 87 parts In-Stock

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$0.394

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87

$0.394

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Parana Technologies

USA . 659 parts In-Stock

1+ parts

$1.596

100+ parts

-

1k+ parts

$2.228

10k+ parts

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659

$1.596

-

$2.228

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DigiPath Technology Company

USA . 675 parts In-Stock

1+ parts

$1.757

100+ parts

$1.617

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675

$1.757

$1.617

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ChromeModa Solutions

Germany . 4,491 parts In-Stock

1+ parts

$1.793

100+ parts

$1.470

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4,491

$1.793

$1.470

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IDEA Electronic Components Group

UK . 1,522 parts In-Stock

1+ parts

$1.793

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$1.614

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1,522

$1.793

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$1.614

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Perfect Parts

USA . 68,320 parts In-Stock

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68,320

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Futuretech Components

Singapore . 12,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Lixinc

USA . 7,417 parts In-Stock

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7,417

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.144

1k+ parts

$0.140

10k+ parts

$0.137

1,000

-

$0.144

$0.140

$0.137

Overview

Discover the power of the CSD18541F5 by Texas Instruments, a high-quality small signal field effect transistor that brings efficiency and reliability to your switching applications. With its N-CHANNEL polarity and built-in diode and resistor, this single configuration transistor offers seamless performance and easy integration. Its compact chip carrier package shape ensures space-saving installation, while the metal-oxide semiconductor technology guarantees exceptional durability. Experience enhanced operation with the CSD18541F5's impressive features, including a minimum DS breakdown voltage of 60V and a maximum drain current of 2.2A. Maximize your productivity and enjoy the benefits of this innovative solution from Texas Instruments.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher electron mobility, allowing for faster switching speeds and lower on-resistance, making them suitable for high-performance applications.

Minimum DS Breakdown Voltage: 60 V

The higher breakdown voltage allows for operation in higher voltage circuits, increasing the versatility of the transistor.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design, reducing the need for external components and saving space on the PCB.

Maximum Drain Current (ID): 2.2 A

The high drain current capability enables the transistor to handle higher power loads, making it suitable for applications with higher current requirements.

Maximum Drain-Source On Resistance: 0.075 ohm

The low on-resistance results in minimal power loss and heat generation when the transistor is in the on-state, improving the efficiency of the circuit.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperature environments, ensuring reliable performance under various conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD18541F5 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10.5 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD18541F5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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