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2N6330

Texas Instruments

2N6330 by Texas Instruments

2N6330 by Texas Instruments is a PNP power BJT with max. collector current of 30A, ideal for switching applications. It features a max. power dissipation of 114W, min. DC current gain of 6, and operates at up to 200°C. Its package style is flange mount with a round shape and bottom terminal position.

Median Price

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Lifecycle Status

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10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,207 parts In-Stock

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Digiode

USA . 1,057 parts In-Stock

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ECAB

Sweden . 548 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 195 parts In-Stock

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Electronic Expediters

USA . 30 parts In-Stock

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30

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 16 parts In-Stock

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MISTER SPROCKETS

USA . 7 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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Elcom Components

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Native Components

USA . 571 parts In-Stock

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$0.643

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Northwest PG Solutions

USA . 794 parts In-Stock

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$0.708

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Parana Technologies

USA . 780 parts In-Stock

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$1.577

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$2.215

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DigiPath Technology Company

USA . 2,154 parts In-Stock

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$1.737

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$1.598

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ChromeModa Solutions

Germany . 3,159 parts In-Stock

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$1.772

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$1.453

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IDEA Electronic Components Group

UK . 609 parts In-Stock

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$1.595

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AZTECH Wire

Italy . 618 parts In-Stock

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$6.963

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One Stop Electronics

USA . 202 parts In-Stock

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$35.050

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Microchip USA

USA . 8,617 parts In-Stock

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Marpe Global Electronics

Taiwan . 4,184 parts In-Stock

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QualityLine Systems

Poland . 4,184 parts In-Stock

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XL Components Corporation

Australia . 4,184 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

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Overview

Experience unparalleled performance and reliability with the 2N6330 by Texas Instruments, a top-tier manufacturer in the industry. As a Power Bipolar Junction Transistor, this PNP transistor is ideal for switching applications, offering a maximum power dissipation of 114W and a maximum collector current of 30A. With a minimum DC current gain of 6 and a maximum operating temperature of 200°C, this transistor ensures optimal functionality and durability in various electronic circuits. Trust Texas Instruments to deliver high-quality components that exceed expectations, making the 2N6330 a valuable asset for your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring the transistor operates at optimal temperatures for longer periods of time.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications due to their ability to handle higher currents and their ease of integration into circuits.

Configuration: SINGLE

Single configuration transistors are simpler to design with and troubleshoot, making them ideal for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast switching speeds and efficient power handling.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits, saving valuable space and simplifying the design process.

Maximum Power Dissipation (Abs): 114 W

High maximum power dissipation capability means the transistor can handle high-power applications without the risk of overheating or damage.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures the transistor can withstand harsh environmental conditions and extended use without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage allows for the handling of higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 30 A

High maximum collector current rating allows the transistor to handle large currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency enables fast switching speeds, making the transistor ideal for applications that require rapid on/off transitions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6330 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6330 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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