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2N6388

Onsemi

2N6388 by Onsemi

The Onsemi 2N6388 is a NPN power BJT with a max collector current of 10A and min DC current gain of 1000. It has a max power dissipation of 45W, making it suitable for amplifier applications. The transistor operates at temperatures up to 175°C and has a peak reflow temperature of 235°C.

Median Price

$1.180

Lifecycle Status

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53

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1k+

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Element14

Singapore . 954 parts In-Stock

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$0.731

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954

$1.003

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$0.593

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Newark

USA . 211 parts In-Stock

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$1.180

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$0.618

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$0.494

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$0.428

211

$1.180

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$0.428

Farnell

UK . 954 parts In-Stock

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$2.868

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$1.637

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$0.818

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$0.717

954

$2.868

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$0.717

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Freelance Electronics

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$0.653

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$0.686

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Nova Conductors

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TEDSS.com

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DigiKey Marketplace

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Ace Electronics

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PC Components Company LLC

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Electronic Supply

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Speed Components Ltd

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Benley Electronics

USA . 10 parts In-Stock

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$0.300

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$0.300

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Semicontronic

India . 895 parts In-Stock

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$0.444

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$0.433

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$0.431

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Corohmni

South Africa . 290 parts In-Stock

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$0.653

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Argo Parts USA

USA . 4,379 parts In-Stock

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$0.714

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$0.693

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Continental Prestige Electronics

USA . 4,023 parts In-Stock

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$0.714

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$0.700

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Corphita

USA . 4,563 parts In-Stock

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$0.903

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IDEA Electronic Components Group

UK . 718 parts In-Stock

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$1.802

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$1.622

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MKK Technologies

India . 534 parts In-Stock

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$3.389

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DigiPath Technology Company

USA . 534 parts In-Stock

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$3.389

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Microchip USA

USA . 3,729 parts In-Stock

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$8.320

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Component Stockers USA

USA . 582 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

USA . 16,155 parts In-Stock

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Problanco Electronics

Mexico . 5,988 parts In-Stock

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Kulean Microsystems

USA . 5,305 parts In-Stock

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TANS Electronics

Latvia . 2,673 parts In-Stock

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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SupplyDigital Components

Austria . 1,902 parts In-Stock

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Supply Digital

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Netroflash

USA . 1,000 parts In-Stock

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$0.664

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Assy Fe

Spain . 928 parts In-Stock

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UHIMA Technologies

Türkiye . 724 parts In-Stock

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Parana Technologies

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USA . 181 parts In-Stock

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Overview

Looking for a reliable power bipolar junction transistor for your amplifier application? Look no further than the 2N6388 by Onsemi. With a maximum collector-emitter voltage of 80V and a peak reflow temperature of 235°C, this NPN transistor offers unmatched quality and durability. The built-in diode and resistor configuration make it a versatile choice for various electronic projects. Trust in Onsemi's reputation for excellence and invest in the 2N6388 for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor in various environments, making it a reliable choice for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high efficiency and low noise performance, making this product ideal for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and low saturation voltage, while the built-in diode and resistor provide additional circuit simplification and cost savings.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor is optimized to provide efficient signal amplification with minimal distortion.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuits, ensuring seamless installation and operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability, making it easy to solder and connect the transistor in a circuit.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and connection options, allowing for versatile use in various applications.

Maximum Power Dissipation (Abs): 45 W

With a high power dissipation capability, this transistor can handle high power levels without overheating, ensuring reliable performance under demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, ensuring the transistor stays in place during operation for consistent performance.

Minimum DC Current Gain (hFE): 1000

A high minimum DC current gain ensures efficient and consistent amplification, making this transistor suitable for applications requiring high gain.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this transistor is capable of functioning reliably in a wide range of environmental conditions, providing stable performance.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for the transistor to handle high voltage levels, making it suitable for applications requiring high voltage operation.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable and efficient choice for various applications.

Maximum Collector Current (IC): 10 A

With a high collector current rating, this transistor can handle large current loads, making it suitable for high-power applications.

Terminal Finish: TIN LEAD

The tin lead finish provides excellent solderability and corrosion resistance, ensuring secure and reliable connections in a circuit.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and layout, making it easy to integrate this transistor into a circuit.

Case Connection: COLLECTOR

The case connection at the collector terminal allows for efficient heat dissipation, ensuring the transistor remains cool during operation for optimal performance.

Peak Reflow Temperature °C: 235

The high peak reflow temperature rating ensures the transistor can withstand the soldering process without damage, making it easy to integrate into a circuit.

Nominal Transition Frequency (fT): 20 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for applications requiring fast switching speeds and high performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6388 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6388 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-055-4347, 5961010554347, 5961-01-548-9576, 5961015489576

NIIN

010554347, 015489576

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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