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2N6329

Texas Instruments

2N6329 by Texas Instruments

2N6329 by Texas Instruments is a PNP BJT transistor with 114W power dissipation, 60V collector-emitter voltage, and 30A collector current. Ideal for switching applications due to its single configuration and silicon element material. Operates at up to 200°C temperature with a min DC current gain of 6 (hFE).

Median Price

$8.240

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 465 parts In-Stock

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$8.240

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465

$8.240

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Digiode

USA . 4,919 parts In-Stock

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4,919

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Vyrian

USA . 3,462 parts In-Stock

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3,462

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ECAB

Sweden . 14 parts In-Stock

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14

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Elcom Components

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.656

100+ parts

$0.649

1k+ parts

$0.623

10k+ parts

-

100

$0.656

$0.649

$0.623

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Corohmni

South Africa . 37 parts In-Stock

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$0.694

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37

$0.694

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Parana Technologies

USA . 1,780 parts In-Stock

1+ parts

$0.988

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$1.877

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1,780

$0.988

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$1.877

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DigiPath Technology Company

USA . 933 parts In-Stock

1+ parts

$1.088

100+ parts

$1.001

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933

$1.088

$1.001

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IDEA Electronic Components Group

UK . 1,779 parts In-Stock

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$1.110

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$0.999

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1,779

$1.110

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$0.999

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ChromeModa Solutions

Germany . 1,052 parts In-Stock

1+ parts

$1.110

100+ parts

$0.910

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1,052

$1.110

$0.910

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Native Components

USA . 981 parts In-Stock

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$1.271

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981

$1.271

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Northwest PG Solutions

USA . 288 parts In-Stock

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$1.398

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288

$1.398

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AZTECH Wire

Italy . 472 parts In-Stock

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$5.585

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472

$5.585

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One Stop Electronics

USA . 1,646 parts In-Stock

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$33.050

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1,646

$33.050

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Component Stockers USA

USA . 30 parts In-Stock

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$1,523.030

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30

$1,523.030

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QUARKTWIN TECHNOLOGY LTD

USA . 16,246 parts In-Stock

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Microchip USA

USA . 5,612 parts In-Stock

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5,612

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RGB Technical Solutions

Ukraine . 3,172 parts In-Stock

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Corphita

USA . 1,833 parts In-Stock

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1,833

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Overview

Upgrade your power applications with the 2N6329 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Power Bipolar Junction Transistors for reliable performance. The PNP configuration and switching capabilities of this transistor make it ideal for a wide range of applications. From amplifiers to power supplies, the 2N6329 offers high power dissipation and collector current, ensuring efficiency and durability. Trust Texas Instruments for superior products that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides better thermal conductivity and mechanical strength, leading to improved reliability and performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product suitable for various switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into different circuit layouts.

Terminal Form: PIN/PEG

Pin/peg terminals provide secure connections and easy soldering for reliable circuit connections.

Maximum Power Dissipation (Abs): 114 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, increasing its reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy installation and secure mounting in various electronic systems.

Minimum DC Current Gain (hFE): 6

Minimum DC current gain of 6 ensures stable and consistent amplification of current in the transistor's operation.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to operate reliably in harsh environments and under high temperatures.

Maximum Collector-Emitter Voltage: 60 V

Maximum collector-emitter voltage of 60V enables the transistor to handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in the transistor's operation.

Maximum Collector Current (IC): 30 A

High maximum collector current rating of 30A allows the transistor to handle high current loads without malfunctioning.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy circuit board layout and soldering of the transistor.

Case Connection: COLLECTOR

Case connection at the collector terminal simplifies circuit design and improves thermal management.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency of 3MHz ensures fast switching speeds and high-frequency operation in the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6329 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6329 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-118-5266, 5961991185266

NIIN

991185266

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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