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2N6323

Texas Instruments

2N6323 by Texas Instruments

2N6323 by Texas Instruments is a NPN BJT with 300V VCE, 30A IC, and 200W Ptot. Ideal for power applications due to its high voltage and current capabilities. Suitable for use in circuits requiring high power dissipation and collector-emitter voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,821 parts In-Stock

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Digiode

USA . 3,826 parts In-Stock

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PUI

USA . 91 parts In-Stock

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Sogenti Electronics

Canada . 39 parts In-Stock

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Electronic Expediters

USA . 4 parts In-Stock

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Native Components

USA . 298 parts In-Stock

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$0.356

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$0.342

298

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Northwest PG Solutions

USA . 313 parts In-Stock

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$0.392

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$0.345

313

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$0.345

Parana Technologies

USA . 2,038 parts In-Stock

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$1.487

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$2.161

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2,038

$1.487

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DigiPath Technology Company

USA . 2,306 parts In-Stock

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$1.638

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$1.507

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$1.638

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ChromeModa Solutions

Germany . 1,766 parts In-Stock

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$1.671

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$1.370

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$1.671

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IDEA Electronic Components Group

UK . 767 parts In-Stock

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$1.671

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$1.504

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767

$1.671

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AZTECH Wire

Italy . 735 parts In-Stock

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$11.377

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$11.377

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One Stop Electronics

USA . 508 parts In-Stock

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$61.050

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Microchip USA

USA . 5,902 parts In-Stock

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Corphita

USA . 1,608 parts In-Stock

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Overview

Unlock endless possibilities with the Texas Instruments 2N6323 Power Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor boasts a maximum power dissipation of 200W and a collector current of 30A, making it ideal for a wide range of applications. Whether you're working on power supplies, motor control, or audio amplifiers, this high-quality component ensures reliable performance and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that empowers your projects to reach new heights.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better thermal conductivity, allowing for efficient dissipation of heat generated during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration makes it easier to use and integrate into circuits.

Package Shape: ROUND

Round package shape can be easily mounted and secured in place.

Maximum Power Dissipation: 200 W

High power dissipation capability allows for reliable performance under heavy loads.

Maximum Collector-Emitter Voltage: 300 V

High voltage rating provides flexibility in circuit design and operation.

Maximum Collector Current: 30 A

High collector current rating allows for handling of high current applications.

Nominal Transition Frequency: 10 MHz

High transition frequency ensures fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6323 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6323 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-111-4724, 5961011114724

NIIN

011114724

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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