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2N6325

New England Semiconductor

2N6325 by New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A;

Median Price

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3

In-Stock Inventory

1k+

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Vyrian

USA . 5,433 parts In-Stock

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Digiode

USA . 2,652 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Parana Technologies

USA . 1,198 parts In-Stock

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$0.830

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$1.795

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$0.830

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$1.795

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DigiPath Technology Company

USA . 2,282 parts In-Stock

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$0.914

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$0.841

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ChromeModa Solutions

Germany . 585 parts In-Stock

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$0.933

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$0.765

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IDEA Electronic Components Group

UK . 560 parts In-Stock

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$0.933

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$0.840

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560

$0.933

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Native Components

USA . 68 parts In-Stock

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$10.360

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68

$10.360

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AZTECH Wire

Italy . 201 parts In-Stock

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$11.359

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$11.359

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Northwest PG Solutions

USA . 972 parts In-Stock

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$11.396

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$10.256

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One Stop Electronics

USA . 1,062 parts In-Stock

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$62.050

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QUARKTWIN TECHNOLOGY LTD

USA . 7,223 parts In-Stock

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Microchip USA

USA . 5,431 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 423 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6325 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-63

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

200 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

2N6325 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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