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2N6387G

Onsemi

2N6387G by Onsemi

2N6387G by Onsemi is a NPN BJT with 10A IC, 60V VCE, and 40W Ptot. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates at up to 150°C with a min hFE of 1000.

Median Price

$0.802

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 457 parts In-Stock

1+ parts

$0.677

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-

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$0.507

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457

$0.677

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$0.507

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Chip1Stop

Japan . 786 parts In-Stock

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$0.926

100+ parts

$0.613

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$0.584

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786

$0.926

$0.613

$0.584

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Mouser Electronics

USA . 2,304 parts In-Stock

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$1.590

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$0.562

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2,304

$1.590

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$0.562

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DigiKey

USA . 34 parts In-Stock

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$1.910

100+ parts

$0.818

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$0.594

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$0.491

34

$1.910

$0.818

$0.594

$0.491

Verical

USA . 457 parts In-Stock

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$0.526

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457

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$0.526

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Rochester

USA . 421 parts In-Stock

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$0.667

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$0.554

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$0.494

421

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$0.667

$0.554

$0.494

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

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$0.509

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870

$0.509

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Digiode

USA . 330 parts In-Stock

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$0.519

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330

$0.519

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TME

Poland . 16 parts In-Stock

1+ parts

$1.580

100+ parts

$0.801

1k+ parts

$0.666

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16

$1.580

$0.801

$0.666

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Flip Electronics

USA . 5,650 parts In-Stock

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Chip Stock

USA . 5,430 parts In-Stock

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IBS Electronics

USA . 850 parts In-Stock

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$1.150

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$0.736

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850

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$1.150

$0.736

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Vyrian

USA . 686 parts In-Stock

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686

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PC Components Company LLC

USA . 100 parts In-Stock

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100

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VNN

France . 90 parts In-Stock

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Bristol Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 637 parts In-Stock

1+ parts

$0.464

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637

$0.464

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Corohmni

South Africa . 321 parts In-Stock

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$0.489

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321

$0.489

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Corphita

USA . 1,271 parts In-Stock

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$0.491

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1,271

$0.491

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.502

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$0.502

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$0.502

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300

$0.502

$0.502

$0.502

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Continental Prestige Electronics

USA . 3,952 parts In-Stock

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$0.509

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$0.499

3,952

$0.509

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$0.499

Argo Parts USA

USA . 3,588 parts In-Stock

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$0.509

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$0.494

3,588

$0.509

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$0.494

Aztec Data Supply Inc.

USA . 2,529 parts In-Stock

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$0.581

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2,529

$0.581

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Semicontronic

India . 946 parts In-Stock

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$1.010

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$0.985

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$0.980

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946

$1.010

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$0.980

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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SupplyDigital Components

Austria . 6,243 parts In-Stock

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Kulean Microsystems

USA . 4,698 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 4,166 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,112 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.499

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$0.484

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$0.473

1,000

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$0.499

$0.484

$0.473

UHIMA Technologies

Türkiye . 976 parts In-Stock

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976

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Overview

Discover the power of the Onsemi 2N6387G, a high-quality Power Bipolar Junction Transistor that exceeds expectations. With its innovative design and reliable performance, this NPN transistor is perfect for amplifier applications. Featuring a built-in diode and resistor, this product offers exceptional value and efficiency to customers. Trust Onsemi for top-notch products that deliver unmatched benefits and advantages in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor provide added functionality in circuits without requiring additional components.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels, making it suitable for applications where power dissipation is a concern.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any issues, ensuring reliability in various operating conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in a wide range of applications that require voltage isolation.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 20 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications such as RF amplifiers and oscillator circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6387G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6387G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-011-5686, 5961010115686

NIIN

010115686

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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