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2N6326

Texas Instruments

2N6326 by Texas Instruments

2N6326 by Texas Instruments is a NPN BJT transistor with 114W power dissipation, 60V collector-emitter voltage, and 30A collector current. Ideal for switching applications due to its single configuration and high transition frequency of 3MHz.

Median Price

$6.510

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 20 parts In-Stock

1+ parts

$6.510

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20

$6.510

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Vyrian

USA . 8,350 parts In-Stock

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8,350

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Digiode

USA . 2,337 parts In-Stock

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2,337

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ACDS - Activité Composants Distribution Service

France . 151 parts In-Stock

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151

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PUI

USA . 58 parts In-Stock

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58

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Holdelec - ElecDif-Pro

France . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 801 parts In-Stock

1+ parts

$1.257

100+ parts

-

1k+ parts

$2.026

10k+ parts

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801

$1.257

-

$2.026

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Native Components

USA . 879 parts In-Stock

1+ parts

$1.290

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879

$1.290

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DigiPath Technology Company

USA . 1,188 parts In-Stock

1+ parts

$1.384

100+ parts

$1.273

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1,188

$1.384

$1.273

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ChromeModa Solutions

Germany . 5,311 parts In-Stock

1+ parts

$1.412

100+ parts

$1.158

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5,311

$1.412

$1.158

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IDEA Electronic Components Group

UK . 2,144 parts In-Stock

1+ parts

$1.412

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$1.271

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2,144

$1.412

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$1.271

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Northwest PG Solutions

USA . 621 parts In-Stock

1+ parts

$1.419

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621

$1.419

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AZTECH Wire

Italy . 741 parts In-Stock

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$7.585

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741

$7.585

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One Stop Electronics

USA . 1,463 parts In-Stock

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$38.050

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1,463

$38.050

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Microchip USA

USA . 10,761 parts In-Stock

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10,761

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QUARKTWIN TECHNOLOGY LTD

USA . 8,537 parts In-Stock

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8,537

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Marpe Global Electronics

Taiwan . 4,418 parts In-Stock

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4,418

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QualityLine Systems

Poland . 4,323 parts In-Stock

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4,323

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XL Components Corporation

Australia . 4,273 parts In-Stock

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4,273

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Corphita

USA . 2,012 parts In-Stock

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2,012

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Perfect Parts

USA . 338 parts In-Stock

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338

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Cyclops Electronics Ltd (Excess)

UK . 151 parts In-Stock

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151

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Glotronic Ltd.

UK . 121 parts In-Stock

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121

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Overview

Unlock the power of innovation with the Texas Instruments 2N6326 Power Bipolar Junction Transistor. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge solutions for various applications in the electronics industry. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 30A, providing unparalleled performance and efficiency. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level. Choose the 2N6326 and experience the difference today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity, allowing for efficient heat dissipation during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and amplification circuits, offering good performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and reliable performance in on/off circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in a variety of electronic devices and systems.

Terminal Form: PIN/PEG

Pin/peg terminal form ensures secure connections and easy soldering, making installation hassle-free.

Maximum Power Dissipation (Abs): 114 W

High maximum power dissipation rating ensures durability and reliability under heavy load conditions, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a stable and secure mounting option, ideal for applications where vibration or movement is a concern.

Minimum DC Current Gain (hFE): 6

Minimum DC current gain ensures proper amplification and signal processing, allowing for accurate and efficient operation in circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable performance in a wide range of environments and conditions, ensuring stability and longevity.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating enables the transistor to withstand higher voltages without breakdown, enhancing overall reliability.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, such as high conductivity and low leakage current, ensuring optimal performance in a variety of circuits.

Maximum Collector Current (IC): 30 A

High maximum collector current rating allows for handling higher current loads, making it suitable for power applications and high-demand circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and connection, providing a straightforward installation process for designers and engineers.

Case Connection: COLLECTOR

Collector case connection offers easy access for circuit connections and ensures a secure grounding point, enhancing overall reliability and performance.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency allows for fast switching speeds and efficient performance in high-frequency applications, making it ideal for switch mode power supplies and RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6326 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6326 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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