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2N6329

New England Semiconductor

2N6329 by New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 114 W; Maximum Collector Current (IC): 30 A;

Median Price

$8.240

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 465 parts In-Stock

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$8.240

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Digiode

USA . 4,919 parts In-Stock

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Vyrian

USA . 3,462 parts In-Stock

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ECAB

Sweden . 14 parts In-Stock

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Elcom Components

USA . 5 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.656

100+ parts

$0.649

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$0.623

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100

$0.656

$0.649

$0.623

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Corohmni

South Africa . 37 parts In-Stock

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$0.694

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Parana Technologies

USA . 1,780 parts In-Stock

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$0.988

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$1.877

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DigiPath Technology Company

USA . 933 parts In-Stock

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$1.088

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$1.001

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IDEA Electronic Components Group

UK . 1,779 parts In-Stock

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$1.110

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$0.999

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ChromeModa Solutions

Germany . 1,052 parts In-Stock

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$1.110

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$0.910

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Native Components

USA . 981 parts In-Stock

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$1.271

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Northwest PG Solutions

USA . 288 parts In-Stock

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$1.398

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AZTECH Wire

Italy . 472 parts In-Stock

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$5.585

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One Stop Electronics

USA . 1,646 parts In-Stock

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$33.050

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Component Stockers USA

USA . 30 parts In-Stock

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$1,523.030

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QUARKTWIN TECHNOLOGY LTD

USA . 16,246 parts In-Stock

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Microchip USA

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RGB Technical Solutions

Ukraine . 3,172 parts In-Stock

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Corphita

USA . 1,833 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6329 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

200 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

2N6329 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-99-118-5266, 5961991185266

NIIN

991185266

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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