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2N6388G

Onsemi

2N6388G by Onsemi

2N6388G by Onsemi is a NPN power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 10A, and min DC current gain of 1000. With a max power dissipation of 45W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.802

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 42 parts In-Stock

1+ parts

$0.900

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$0.700

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$0.550

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42

$0.900

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$0.550

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Farnell

UK . 1,546 parts In-Stock

1+ parts

$1.280

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$0.569

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$0.369

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$0.367

1,546

$1.280

$0.569

$0.369

$0.367

Mouser Electronics

USA . 2,039 parts In-Stock

1+ parts

$1.420

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$0.620

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$0.420

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$0.418

2,039

$1.420

$0.620

$0.420

$0.418

DigiKey

USA . 3,122 parts In-Stock

1+ parts

$1.540

100+ parts

$0.648

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$0.464

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$0.366

3,122

$1.540

$0.648

$0.464

$0.366

Newark

USA . 640 parts In-Stock

1+ parts

$1.610

100+ parts

$0.803

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$0.575

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$0.573

640

$1.610

$0.803

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$0.573

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.980

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$1.881

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$1.881

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500

$1.980

$1.881

$1.881

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Element14

Singapore . 2,376 parts In-Stock

1+ parts

$2.100

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$0.920

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$0.594

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$0.583

2,376

$2.100

$0.920

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$0.583

Rochester

USA . 1,798 parts In-Stock

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-

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$0.497

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$0.412

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$0.367

1,798

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$0.367

RS (Exports)

UK . 1,645 parts In-Stock

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$0.532

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Master Electronics

USA . 1,600 parts In-Stock

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$0.704

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$0.414

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$0.357

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Chip1Stop

Japan . 1,000 parts In-Stock

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Arrow

USA . 916 parts In-Stock

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$0.366

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$0.363

916

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$0.363

Verical

USA . 900 parts In-Stock

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$0.363

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Avnet

USA . 500 parts In-Stock

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500

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Future Electronics

Canada . 18 parts In-Stock

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$0.575

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$0.540

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$0.515

18

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$0.575

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$0.515

Distributors (In-Stock)

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Digiode

USA . 2,249 parts In-Stock

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$0.386

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$0.386

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Nova Conductors

Japan . 60 parts In-Stock

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$0.417

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$0.417

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TME

Poland . 83 parts In-Stock

1+ parts

$1.390

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$0.592

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83

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$0.592

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VNN

France . 4,307 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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$0.956

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$0.861

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$0.861

IBS Electronics

USA . 1,868 parts In-Stock

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$0.863

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$0.547

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Vyrian

USA . 957 parts In-Stock

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Flip Electronics

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ComSIT Distribution GmbH

Germany . 123 parts In-Stock

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Semtec, LLC

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First Choice Components Inc.

USA . 65 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 50 parts In-Stock

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Tech-Mark Corp

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Bristol Electronics

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Inventory MP

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Atlantic Semiconductor

USA . 7 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 1,249 parts In-Stock

1+ parts

$0.345

100+ parts

$0.336

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$0.335

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1,249

$0.345

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$0.335

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Corohmni

South Africa . 350 parts In-Stock

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$0.365

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Corphita

USA . 129 parts In-Stock

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Argo Parts USA

USA . 111 parts In-Stock

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$0.417

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$0.404

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Netroflash

USA . 2,000 parts In-Stock

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$0.417

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$0.409

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$0.417

$0.409

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Ampacity Inc.

Singapore . 874 parts In-Stock

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$0.750

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874

$0.750

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Continental Prestige Electronics

USA . 459 parts In-Stock

1+ parts

$0.777

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$0.527

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$0.362

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$0.347

459

$0.777

$0.527

$0.362

$0.347

Aztec Data Supply Inc.

USA . 3,137 parts In-Stock

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$1.035

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$1.035

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.980

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$1.881

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$1.881

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$1.980

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$1.881

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Lixinc

USA . 11,525 parts In-Stock

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TANS Electronics

Latvia . 7,439 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,204 parts In-Stock

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Kulean Microsystems

USA . 5,903 parts In-Stock

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Perfect Parts

USA . 5,275 parts In-Stock

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SupplyDigital Components

Austria . 3,452 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Authorized Procurement Solutions

USA . 1,950 parts In-Stock

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Allen Electronics Distributors

USA . 1,740 parts In-Stock

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$0.470

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$0.328

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Eastek

USA . 1,600 parts In-Stock

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Kepictronics

USA . 1,550 parts In-Stock

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Problanco Electronics

Mexico . 953 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Overview

Step into the world of reliable and efficient power management with the Onsemi 2N6388G Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers a high DC current gain of 1000 and a maximum collector-emitter voltage of 80V, making it ideal for amplifier applications. With a maximum power dissipation of 45W and a built-in diode and resistor, this transistor delivers exceptional performance and durability. Upgrade your electronic projects with the quality and value of the 2N6388G from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection, ensuring the reliability and longevity of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplifiers and switches, making this transistor versatile for various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain, while the built-in diode and resistor provide convenience and potentially reduce external components required.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 45 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, making it suitable for demanding applications.

Maximum Collector Current (IC): 10 A

With a high collector current rating, this transistor can handle large current flows, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 20 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making the transistor ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6388G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6388G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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