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2N6322

Texas Instruments

2N6322 by Texas Instruments

2N6322 by Texas Instruments is a NPN Power BJT with 200V VCE, 30A IC, and 200W Ptot. Ideal for high-power applications due to its robust design and flange mount package style. Offers a min hFE of 6 and operates up to 200°C, making it suitable for demanding environments.

Median Price

$4.740

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 496 parts In-Stock

1+ parts

$4.740

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496

$4.740

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Vyrian

USA . 5,281 parts In-Stock

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5,281

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Digiode

USA . 1,568 parts In-Stock

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1,568

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PUI

USA . 171 parts In-Stock

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171

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PAR Electronics

UK . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 85 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

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10k+ parts

$0.075

85

$0.078

-

-

$0.075

Northwest PG Solutions

USA . 1,107 parts In-Stock

1+ parts

$0.086

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$0.076

1,107

$0.086

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$0.076

Parana Technologies

USA . 487 parts In-Stock

1+ parts

$1.264

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$2.031

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487

$1.264

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$2.031

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DigiPath Technology Company

USA . 391 parts In-Stock

1+ parts

$1.392

100+ parts

$1.280

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391

$1.392

$1.280

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ChromeModa Solutions

Germany . 2,573 parts In-Stock

1+ parts

$1.420

100+ parts

$1.164

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2,573

$1.420

$1.164

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IDEA Electronic Components Group

UK . 1,748 parts In-Stock

1+ parts

$1.420

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$1.278

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1,748

$1.420

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$1.278

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AZTECH Wire

Italy . 528 parts In-Stock

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$19.656

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528

$19.656

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One Stop Electronics

USA . 693 parts In-Stock

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$56.050

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693

$56.050

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Microchip USA

USA . 5,349 parts In-Stock

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$467.190

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5,349

$467.190

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QUARKTWIN TECHNOLOGY LTD

USA . 7,371 parts In-Stock

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7,371

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Corphita

USA . 1,689 parts In-Stock

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1,689

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Overview

Elevate your power management solutions with the 2N6322 by Texas Instruments. Crafted with precision and expertise, this NPN Power Bipolar Junction Transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, from industrial machinery to automotive electronics, this transistor delivers exceptional power dissipation and maximum collector current. Trust Texas Instruments for quality components that exceed expectations. Revolutionize your projects with the 2N6322 today.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal package body material provides good thermal conductivity and high mechanical strength, allowing for efficient heat dissipation and durable construction.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications in electronics.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic devices.

Package Shape: ROUND

The round package shape is compact and space-saving, making it ideal for applications where size constraints are a concern.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation, this transistor can handle significant amounts of power, making it suitable for high-power applications.

Terminal Form: PIN/PEG

The pin/peg terminal form allows for easy and secure connections, enhancing the reliability of the transistor in a circuit.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage rating provides protection against voltage spikes and ensures the transistor can handle higher voltages without breakdown.

Nominal Transition Frequency (fT): 10 MHz

The high nominal transition frequency indicates good high-frequency performance, making this transistor suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6322 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6322 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-258-5848, 5961012585848, 5961-14-352-3845, 5961143523845

NIIN

012585848, 143523845

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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