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P0111CN

STMicroelectronics

P0111CN by STMicroelectronics

P0111CN by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for surface mount applications. It features a max on-state current of 0.5 A, non-repetitive peak on-state current of 8 A, and operates b/w -40 °C to 125°C. This device is suitable for power control and switching applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,546 parts In-Stock

1+ parts

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2,546

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Anansix

USA . 1,904 parts In-Stock

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1,904

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Vyrian

USA . 875 parts In-Stock

1+ parts

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875

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,023 parts In-Stock

1+ parts

$2.306

100+ parts

-

1k+ parts

$2.076

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1,023

$2.306

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$2.076

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MKK Technologies

India . 964 parts In-Stock

1+ parts

$4.337

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964

$4.337

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DigiPath Technology Company

USA . 964 parts In-Stock

1+ parts

$4.337

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964

$4.337

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Corphita

USA . 2,164 parts In-Stock

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2,164

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Parana Technologies

USA . 257 parts In-Stock

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$2.758

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257

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$2.758

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Overview

Unlock superior performance and reliability with the P0111CN from STMicroelectronics, a trusted name in cutting-edge semiconductor solutions. Designed for versatility, this Silicon Controlled Rectifier excels in various applications, from industrial controls to consumer electronics. With exceptional thermal stability and low leakage current, it ensures long-lasting efficiency. Choose the P0111CN to enhance your projects and experience the unmatched quality that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures reliability and longevity of the device.

Maximum DC Gate Trigger Current: 0.025 mA

Low gate trigger current makes this SCR efficient, allowing it to operate effectively with minimal power requirements.

Configuration: SINGLE

Single configuration simplifies design and integration into various circuits, making it versatile for a wide range of applications.

Non Repetitive Peak On-state Current: 8 A

High peak on-state current rating provides robustness for handling short bursts of high current, ideal for transient conditions.

Surface Mount: YES

Surface mount capability improves assembly efficiency and allows for compact circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, enabling better layout options for designers.

Terminal Form: GULL WING

Gull wing terminals provide a secure and reliable connection, enhancing the mechanical stability of the device.

Maximum On-state Current: 0.5 A

Moderate on-state current rating supports various applications while ensuring reliable operation.

Maximum Leakage Current: 0.001 mA

Extremely low leakage current enhances energy efficiency and reduces unwanted current flow in circuits.

Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating protects the device in high voltage environments, ensuring durability in demanding conditions.

No. of Terminals: 4

Four terminals allow for versatile configuration options in circuits, facilitating various connection schemes.

Package Style (Meter): SMALL OUTLINE

Small outline package style maximizes space efficiency, allowing for dense circuit designs.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance ensures reliable performance in a wide range of environmental conditions.

Trigger Device Type: SCR

As an SCR, this component is ideal for controlling high voltage and current in power applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature expands the range of applications in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and helps prevent oxidation, ensuring a reliable connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in routing and layout on printed circuit boards.

Maximum RMS On-state Current: 0.8 A

Sufficient RMS current rating allows the SCR to handle a variety of load conditions effectively.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage promotes energy efficiency and increases compatibility with low-voltage control signals.

Repetitive Peak Off-state Voltage: 300 V

High off-state voltage rating provides excellent blocking capabilities in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

Specifying a critical rate ensures stability during operation, minimizing the risk of voltage-related failures.

Maximum Holding Current: 5 mA

Low holding current facilitates turn-off characteristics, allowing for efficient control in circuits.

Nominal Circuit Commutated Turn-off Time: 200 μs

Fast turn-off time enhances performance in switching applications, making it suitable for fast-paced environments.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111CN attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

4

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111CN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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