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P0111DA

STMicroelectronics

P0111DA by STMicroelectronics

P0111DA by STMicroelectronics is a single SCR in a cylindrical plastic package, ideal for controlling high voltage applications. It features a max repetitive peak reverse voltage of 400 V and can handle up to 8 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it's perfect for robust electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,314 parts In-Stock

1+ parts

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2,314

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Anansix

USA . 870 parts In-Stock

1+ parts

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870

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Digiode

USA . 320 parts In-Stock

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320

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,449 parts In-Stock

1+ parts

$2.576

100+ parts

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1k+ parts

$2.318

10k+ parts

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1,449

$2.576

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$2.318

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MKK Technologies

India . 641 parts In-Stock

1+ parts

$4.844

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641

$4.844

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DigiPath Technology Company

USA . 641 parts In-Stock

1+ parts

$4.844

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641

$4.844

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Parana Technologies

USA . 651 parts In-Stock

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$3.080

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651

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$3.080

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Corphita

USA . 172 parts In-Stock

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172

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Overview

Elevate your designs with the P0111DA from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance Silicon Controlled Rectifier ensures reliable switching and robust operation across diverse applications, from power management to motor control. With exceptional thermal stability and low leakage current, it delivers efficiency and longevity, allowing you to create smarter, more efficient systems that stand the test of time. Experience the quality and reliability that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.025 mA

A low gate trigger current requirement means less power consumption and makes it easy to drive with low-power control circuits.

Configuration: SINGLE

Being a single configuration allows for straightforward integration into circuits, reducing complexity in design.

Non Repetitive Peak On-state Current: 8 A

The ability to handle non-repetitive peak currents of up to 8 A allows for robust performance under short circuit conditions.

Package Shape: ROUND

The round package shape enhances thermal management and allows for easier mounting in different setup configurations.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides improved mechanical stability and ease of soldering, making it a reliable choice for prototyping and production.

Maximum On-state Current: 0.5 A

This maximum on-state current rating ensures that the product can manage sufficient load without overheating, suitable for numerous applications.

Maximum Leakage Current: 0.001 mA

A very low maximum leakage current contributes to energy efficiency, making this SCR ideal for low-power applications.

Repetitive Peak Reverse Voltage: 400 V

A high repetitive peak reverse voltage rating allows this SCR to be used in high-voltage applications, adding versatility.

Number of Terminals: 3

Having three terminals makes the SCR easier to integrate into various circuit designs, providing flexibility in usage.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is beneficial for compact design layouts and can help with spatial considerations in circuit assemblies.

Maximum Operating Temperature: 125 °C

With a maximum operation temperature of 125 °C, this SCR is suitable for demanding applications where heat dissipation is a concern.

Trigger Device Type: SCR

As a silicon-controlled rectifier, it is ideal for controlling high power in applications such as motor drives and power converters.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold conditions down to -40 °C, this SCR is versatile for both indoor and outdoor applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and resistance to oxidation, enhancing the longevity of the component.

Terminal Position: BOTTOM

Bottom terminal positioning allows for a stable mount which is beneficial for circuit board designs that require a low profile.

Maximum RMS On-state Current: 0.8 A

The high RMS on-state current rating supports stronger loads and improves performance in applications requiring higher continuous currents.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage requirement simplifies control circuit design, making it easier to implement in systems.

Repetitive Peak Off-state Voltage: 400 V

This high off-state voltage capability allows the SCR to manage significant voltage stress, enhancing reliability in power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/µs

This specification indicates the SCR's ability to withstand rapid changes in voltage, making it suitable for applications with fast switching requirements.

Maximum Holding Current: 5 mA

A low holding current helps to prevent accidental triggering, making the SCR reliable in applications where stability is critical.

Nominal Circuit Commutated Turn-off Time: 200 µs

The relatively short turn-off time enables quick switching applications, making it effective for high-frequency circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111DA attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111DA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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