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P0111BN5AA4

STMicroelectronics

P0111BN5AA4 by STMicroelectronics

STMicroelectronics' P0111BN5AA4 is a SCR with 200V repetitive peak reverse voltage, 0.8A max RMS on-state current, and 0.025mA DC gate trigger current. It's a single configuration SCR in a small outline package for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,301 parts In-Stock

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3,301

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Digiode

USA . 3,061 parts In-Stock

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3,061

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Anansix

USA . 791 parts In-Stock

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791

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,783 parts In-Stock

1+ parts

$2.552

100+ parts

-

1k+ parts

$2.297

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1,783

$2.552

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$2.297

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MKK Technologies

India . 115 parts In-Stock

1+ parts

$4.799

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115

$4.799

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DigiPath Technology Company

USA . 115 parts In-Stock

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$4.799

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115

$4.799

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Corphita

USA . 937 parts In-Stock

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Parana Technologies

USA . 144 parts In-Stock

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$3.051

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144

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$3.051

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Overview

Unleash the power of efficiency with the P0111BN5AA4 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures quality and reliability in every product they create. The P0111BN5AA4 falls under the category of Silicon Controlled Rectifiers (SCR), offering a wide range of applications for various electronic devices. With its maximum DC Gate Trigger Current of 0.025 mA and Repetitive Peak Reverse Voltage of 200 V, this SCR provides optimal performance and durability. Discover the value and benefits of this cutting-edge technology, designed to enhance your electronic projects like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the SCR, ensuring durability and reliability in various applications.

Maximum DC Gate Trigger Current: 0.025 mA

Low gate trigger current ensures efficient and precise control of the SCR, making it suitable for sensitive electronic circuits.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making it easier to integrate the SCR into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving design, ideal for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting on circuit boards and ensures a secure fit within electronic systems.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and ease of soldering, enhancing the overall reliability of the SCR.

Repetitive Peak Reverse Voltage: 200 V

With a high repetitive peak reverse voltage, this SCR can handle high voltage applications with ease, ensuring reliable performance under varying conditions.

No. of Terminals: 4

Having 4 terminals provides flexibility in connection options and allows for versatile integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs, making it suitable for portable or space-constrained electronic devices.

Trigger Device Type: SCR

Being an SCR ensures reliable and fast switching capabilities, making it suitable for applications that require precise and efficient control of power.

Terminal Position: DUAL

Dual terminal positioning allows for convenient and secure connections, enhancing the overall performance and reliability of the SCR in the circuit.

Maximum RMS On-state Current: 0.8 A

With a high maximum RMS on-state current, this SCR can handle moderate power loads effectively, making it suitable for a wide range of applications.

Repetitive Peak Off-state Voltage: 200 V

The repetitive peak off-state voltage of 200 V allows the SCR to operate efficiently and reliably in various applications that require high voltage handling capabilities.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111BN5AA4 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Maximum DC Gate Trigger Current:

.025 mA

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111BN5AA4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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