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P0111BN

STMicroelectronics

P0111BN by STMicroelectronics

P0111BN by STMicroelectronics is a single SCR in a small outline package, ideal for surface mount applications. It features a max on-state current of 0.5 A, non-repetitive peak on-state current of 8 A, and operates b/w -40 °C to 125°C. This device is perfect for controlling power in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,272 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,272

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Vyrian

USA . 3,661 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,661

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Anansix

USA . 2,859 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,859

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,215 parts In-Stock

1+ parts

$2.858

100+ parts

-

1k+ parts

$2.572

10k+ parts

-

2,215

$2.858

-

$2.572

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MKK Technologies

India . 1,728 parts In-Stock

1+ parts

$5.373

100+ parts

-

1k+ parts

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10k+ parts

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1,728

$5.373

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DigiPath Technology Company

USA . 1,728 parts In-Stock

1+ parts

$5.373

100+ parts

-

1k+ parts

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10k+ parts

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1,728

$5.373

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Corphita

USA . 2,905 parts In-Stock

1+ parts

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2,905

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Parana Technologies

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

$3.417

1k+ parts

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10k+ parts

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1,601

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$3.417

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Overview

Unlock the potential of your applications with the P0111BN from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) promises exceptional performance and reliability, suitable for a variety of uses—from power management to motor control. With its robust design and outstanding thermal stability, it ensures long-lasting efficiency and minimal maintenance, empowering you to elevate your projects with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers excellent durability and resistance to moisture, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 0.025 mA

A low gate trigger current allows for minimal power consumption during operation, enhancing energy efficiency in circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Non Repetitive Peak On-state Current: 8 A

This high peak on-state current capability enables the component to handle high surges, increasing reliability in demanding conditions.

Surface Mount: YES

Surface mount technology facilitates compact designs and automated assembly, making it ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards, optimizing layout.

Terminal Form: GULL WING

Gull wing terminals provide reliable soldering and excellent mechanical support, ensuring robust connections.

Maximum On-state Current: 0.5 A

This current capacity is suitable for a wide range of applications, providing flexibility in circuit design.

Maximum Leakage Current: 0.001 mA

Ultra-low leakage current contributes to improved power efficiency and reliability in sensitive applications.

Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage rating ensures the device can withstand significant voltage swings, enhancing longevity.

No. of Terminals: 4

Four terminals offer versatile connection options, making integration into various circuit configurations more straightforward.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes board space consumption, which is advantageous in compact electronics.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature supports applications in high-heat environments, improving reliability.

Trigger Device Type: SCR

As a silicon controlled rectifier, it provides fast switching and efficient control of high power applications.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures expands its usability in a variety of climates and environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible routing and connections on a PCB, enhancing design versatility.

Maximum RMS On-state Current: 0.8 A

An RMS on-state current rating of 0.8 A makes it capable of handling more robust operational loads effectively.

Maximum DC Gate Trigger Voltage: 0.8 V

A low voltage requirement for gate triggering means it can be activated with minimal drive voltage, conserving overall energy.

Case Connection: ANODE

Connecting through the anode optimizes circuit designs for controlling loads in various electronic applications.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage handling is essential for preventing undesired conduction in high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/us

A high rate of rise ensures the device can rapidly respond to voltage changes, facilitating safer circuit operation.

Maximum Holding Current: 5 mA

The low holding current facilitates easier turn-off, making it suitable for applications requiring precise control.

Nominal Circuit Commutated Turn-off Time: 200 µs

A quick turn-off time enhances the efficiency of switching applications, reducing losses and improving performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111BN attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

4

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111BN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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