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P0111BA

STMicroelectronics

P0111BA by STMicroelectronics

P0111BA by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for controlling high voltages. It supports a max on-state current of 0.5 A and operates b/w -40 °C to 125°C. Perfect for applications requiring reliable switching and voltage regulation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,670 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,670

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Anansix

USA . 2,506 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,506

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Vyrian

USA . 2,402 parts In-Stock

1+ parts

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100+ parts

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2,402

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,076 parts In-Stock

1+ parts

$3.547

100+ parts

-

1k+ parts

$3.192

10k+ parts

-

2,076

$3.547

-

$3.192

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MKK Technologies

India . 1,228 parts In-Stock

1+ parts

$6.669

100+ parts

-

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10k+ parts

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1,228

$6.669

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DigiPath Technology Company

USA . 1,228 parts In-Stock

1+ parts

$6.669

100+ parts

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10k+ parts

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1,228

$6.669

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Parana Technologies

USA . 1,400 parts In-Stock

1+ parts

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100+ parts

$4.240

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1,400

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$4.240

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Corphita

USA . 1,198 parts In-Stock

1+ parts

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1,198

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Overview

Unlock superior performance with the P0111BA from STMicroelectronics, a leading name in semiconductor innovation. This Silicon Controlled Rectifier (SCR) offers exceptional reliability and efficiency for a variety of applications, including motor control and power management. With its robust design and impressive thermal stability, the P0111BA ensures optimal functionality even under demanding conditions, delivering unmatched value and peace of mind for your projects. Choose quality, choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides excellent insulation and is lightweight, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.025 mA

With a low gate trigger current, this SCR is energy efficient and ideal for low-power applications.

Configuration: SINGLE

A single configuration simplifies circuit design and makes it easy to integrate into existing systems.

Non Repetitive Peak On-state Current: 8 A

This high peak current capability allows the SCR to handle surge conditions effectively, enhancing reliability.

Package Shape: ROUND

The round package shape aids in efficient thermal management and fits easily into various mounting styles.

Terminal Form: WIRE

Wire terminals allow for flexible connectivity options, enabling easy assembly and integration into circuits.

Maximum On-state Current: 0.5 A

With a maximum on-state current of 0.5 A, this SCR can manage moderate loads effectively in various applications.

Maximum Leakage Current: 0.001 mA

Low leakage current minimizes power loss and enhances the energy efficiency of the device.

Repetitive Peak Reverse Voltage: 200 V

This high voltage rating allows the SCR to be used in high-voltage applications, increasing its versatility.

Number of Terminals: 3

Three terminals provide flexible connection options, making it easier to implement in different circuit topologies.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and helps optimize space in circuit designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures that this SCR can function well in demanding environments.

Trigger Device Type: SCR

Being an SCR, it is suitable for controlling high power levels with precise triggering, widely utilized in power electronics.

Minimum Operating Temperature: -40 °C

This wide temperature range ensures reliable performance in extreme conditions, making it suitable for outdoor applications.

Terminal Finish: MATTE TIN

Matte tin terminals provide good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for printed circuit board integration, reducing space requirements.

Maximum RMS On-state Current: 0.8 A

The higher RMS current rating allows for more robust performance in continuous load applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage requirements improve compatibility with a range of control circuits and reduce power consumption.

Repetitive Peak Off-state Voltage: 200 V

This high off-state voltage rating expands the SCR's application range to more demanding electrical systems.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

This fast rate of voltage rise ensures quick turn-off capabilities, enhancing overall system performance.

Maximum Holding Current: 5 mA

With a low holding current requirement, this SCR can maintain its state with minimal power, increasing efficiency.

Nominal Circuit Commutated Turn-off Time: 200 us

A brief turn-off time allows for efficient switching in circuits, making it suitable for high-frequency applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111BA attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111BA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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