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P0111BA1AA3

STMicroelectronics

P0111BA1AA3 by STMicroelectronics

P0111BA1AA3 by STMicroelectronics is a SCR with 200V repetitive peak reverse voltage, 0.8A max RMS on-state current, and 0.025mA max DC gate trigger current. It is used in applications requiring reliable switching at temperatures ranging from -40 °C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,630 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,630

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Vyrian

USA . 4,058 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,058

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Anansix

USA . 1,843 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,843

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 761 parts In-Stock

1+ parts

$4.046

100+ parts

-

1k+ parts

$3.642

10k+ parts

-

761

$4.046

-

$3.642

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MKK Technologies

India . 771 parts In-Stock

1+ parts

$7.609

100+ parts

-

1k+ parts

-

10k+ parts

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771

$7.609

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-

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DigiPath Technology Company

USA . 771 parts In-Stock

1+ parts

$7.609

100+ parts

-

1k+ parts

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10k+ parts

-

771

$7.609

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-

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Corphita

USA . 4,775 parts In-Stock

1+ parts

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4,775

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Parana Technologies

USA . 1,514 parts In-Stock

1+ parts

-

100+ parts

$4.838

1k+ parts

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10k+ parts

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1,514

-

$4.838

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Overview

Discover the power of the P0111BA1AA3 Silicon Controlled Rectifier by STMicroelectronics. With a reputation for high-quality manufacturing, this SCR offers customers reliability and efficiency in a variety of applications. From industrial equipment to consumer electronics, this product provides value through its robust design and superior performance. Trust STMicroelectronics to deliver innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the SCR, making it suitable for various environments.

Maximum DC Gate Trigger Current: 0.025 mA

The low maximum DC gate trigger current allows for precise and controlled triggering of the SCR, ensuring reliability and efficiency in operation.

Configuration: SINGLE

The single configuration simplifies the setup and wiring of the SCR, making it user-friendly and easy to integrate into different systems.

Package Shape: ROUND

The round package shape offers compactness and ease of mounting, saving space and facilitating installation of the SCR.

Terminal Form: WIRE

The wire terminal form enables secure and reliable connections, ensuring stable performance of the SCR in various applications.

Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage rating of 200 V provides protection against voltage spikes and overloads, enhancing the reliability of the SCR.

No. of Terminals: 3

The 3 terminals allow for flexible connections and configurations, enabling versatile use of the SCR in different circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a robust and compact design, making the SCR suitable for space-constrained applications while providing mechanical strength.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows the SCR to withstand high temperature environments, ensuring stable performance under challenging conditions.

Trigger Device Type: SCR

Being an SCR, the trigger device type ensures reliable and efficient switching of the semiconductor device, making it ideal for various power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C enables the SCR to function in cold environments, providing versatility in operating conditions.

Terminal Position: BOTTOM

The bottom terminal position simplifies the connection process and facilitates mounting of the SCR, ensuring ease of use and installation.

Maximum RMS On-state Current: 0.8 A

The high maximum RMS on-state current rating of 0.8 A allows the SCR to handle heavy loads with efficiency, making it suitable for power control applications.

Repetitive Peak Off-state Voltage: 200 V

The repetitive peak off-state voltage of 200 V provides protection against voltage surges and transients, enhancing the durability and reliability of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111BA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Maximum DC Gate Trigger Current:

.025 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111BA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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