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P0111DA2AL3

STMicroelectronics

P0111DA2AL3 by STMicroelectronics

P0111DA2AL3 by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for controlling high voltage applications. It features a max repetitive peak reverse voltage of 400 V and can handle up to 8 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it’s perfect for robust electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,140 parts In-Stock

1+ parts

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4,140

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Vyrian

USA . 3,691 parts In-Stock

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3,691

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Anansix

USA . 787 parts In-Stock

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787

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 732 parts In-Stock

1+ parts

$3.347

100+ parts

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1k+ parts

$3.012

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732

$3.347

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$3.012

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MKK Technologies

India . 1,717 parts In-Stock

1+ parts

$6.294

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1,717

$6.294

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DigiPath Technology Company

USA . 1,717 parts In-Stock

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$6.294

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1,717

$6.294

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Parana Technologies

USA . 938 parts In-Stock

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$4.002

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938

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$4.002

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Corphita

USA . 169 parts In-Stock

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169

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Overview

Unlock the power of reliable performance with STMicroelectronics' P0111DA2AL3 silicon controlled rectifier. Crafted from top-tier materials, this robust SCR ensures exceptional durability and efficiency across a wide range of applications, from motor control to lighting systems. Experience superior quality and unparalleled support from an industry leader, enhancing your designs with dependable solutions that maximize operational longevity and minimize downtime. Elevate your projects with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and protects against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.025 mA

A low gate trigger current allows for efficient operation, reducing power consumption while maintaining sensitivity.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, making it easier to use in various applications.

Non Repetitive Peak On-state Current: 8 A

The capability to handle high peak currents makes this SCR suitable for applications requiring robust power management.

Package Shape: ROUND

The round package shape is ideal for space-efficient designs, allowing for convenient placement within various configurations.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering, enhancing reliability in circuit assemblies.

Maximum On-state Current: 0.5 A

With a maximum on-state current of 0.5 A, this SCR can effectively handle moderate loads in various applications.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal energy loss during operation, contributing to overall energy efficiency in circuits.

Repetitive Peak Reverse Voltage: 400 V

The ability to withstand high peak reverse voltages increases reliability in high-voltage applications, making it a robust choice.

Number of Terminals: 3

The three-terminal design simplifies the control of the device and allows for better circuit integration.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enhances thermal dissipation and provides a unique aesthetic that suits various electronic designs.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this SCR to function effectively in harsher environments without performance degradation.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier (SCR), this device is designed for applications that require controlled switching and high efficiency.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures expands the potential application range in extreme environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring long-term reliability in use.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate compact designs and optimize space utilization in circuit layouts.

Maximum RMS On-state Current: 0.8 A

The ability to handle a maximum RMS on-state current of 0.8 A enables this SCR to manage substantial power loads efficiently.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage requirement minimizes the driving voltage needed, which is beneficial for battery-operated devices.

Repetitive Peak Off-state Voltage: 400 V

The capability to handle high off-state voltages ensures dependability in devices used in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 80 V/µs

A high critical rate of rise of off-state voltage allows for quick turn-off performance, greatly improving the SCR's responsiveness.

Maximum Holding Current: 5 mA

The low holding current requirement allows for minimal energy loss while maintaining operation in controlled environments.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111DA2AL3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

80 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111DA2AL3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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