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P0111CA

STMicroelectronics

P0111CA by STMicroelectronics

P0111CA by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for power control applications. It features a max on-state current of 0.5 A, peak reverse voltage of 300 V, and operates b/w -45 °C to 125°C. This component excels in efficient switching and voltage regulation tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,728 parts In-Stock

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2,728

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Anansix

USA . 2,065 parts In-Stock

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2,065

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Digiode

USA . 219 parts In-Stock

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219

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 43 parts In-Stock

1+ parts

$2.713

100+ parts

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$2.442

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43

$2.713

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$2.442

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MKK Technologies

India . 1,940 parts In-Stock

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$5.102

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1,940

$5.102

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DigiPath Technology Company

USA . 1,940 parts In-Stock

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$5.102

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1,940

$5.102

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Corphita

USA . 2,766 parts In-Stock

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2,766

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Parana Technologies

USA . 73 parts In-Stock

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$3.244

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73

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$3.244

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Overview

Unlock the power of reliability with the P0111CA from STMicroelectronics, a leading name in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) is designed to deliver exceptional performance across various applications, ensuring efficiency and durability. With its robust construction and superior thermal management, it provides unmatched value for your projects, making it the ideal choice for automotive, industrial, and consumer electronics. Experience the benefits of precision control and optimal energy management that only STMicroelectronics can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and resistance to environmental factors, making the SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.025 mA

A low gate trigger current requirement ensures energy efficiency and reduces the power needed for operation, making it easier to incorporate in circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, ideal for straightforward applications where space and complexity need to be minimized.

Non Repetitive Peak On-state Current: 8 A

This high peak current capability allows the SCR to handle substantial loads during short bursts, enhancing its versatility in various high-power applications.

Package Shape: ROUND

The round package shape is beneficial for space efficiency and allows for easy fitting into compact PCB designs.

Terminal Form: WIRE

Wire terminals provide flexibility in installation and connections, facilitating easier integration in various setups.

Maximum On-state Current: 0.5 A

The ability to handle a maximum on-state current of 0.5 A makes this SCR suitable for low to medium power applications.

Maximum Leakage Current: 0.001 mA

A low leakage current enhances the efficiency of the SCR, ensuring minimal energy loss in standby mode.

Repetitive Peak Reverse Voltage: 300 V

The capability of withstanding up to 300 V makes this SCR suitable for applications involving high reverse voltages, ensuring reliability.

Number of Terminals: 3

With three terminals, this SCR allows for versatile configurations and easy integration in most application environments.

Package Style (Meter): CYLINDRICAL

A cylindrical package style enhances handling and mounting options, providing convenience in assembly.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable operation in demanding environments, improving overall durability.

Trigger Device Type: SCR

As an SCR, this component is capable of controlling large currents, making it suitable for applications like rectifiers and motor control.

Minimum Operating Temperature: -45 °C

A wide operating temperature range ensures the SCR functions reliably in extreme conditions, enhancing its applicability.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and corrosion resistance, enhancing the product's longevity.

Terminal Position: BOTTOM

Bottom terminal position provides a space-saving design that is suitable for compact or dense PCB layouts.

Maximum RMS On-state Current: 0.8 A

This high RMS capability ensures the SCR can handle consistent loads, making it reliable for continuous duty applications.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage increases system design flexibility and reduces power requirements for triggering the SCR.

Repetitive Peak Off-state Voltage: 300 V

This specification indicates robustness and suitability for high-voltage applications, which is critical for many industrial uses.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

A high critical rate ensures that the SCR can handle sudden voltage changes without failing, improving reliability in switching applications.

Maximum Holding Current: 5 mA

A low holding current requirement allows for efficient control in applications where power consumption needs to be minimized.

Nominal Circuit Commutated Turn-off Time: 200 us

Fast turn-off time improves switching performance and allows for higher frequency operation, making it suitable for modern electronic applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111CA attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111CA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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