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P0111AN

STMicroelectronics

P0111AN by STMicroelectronics

P0111AN by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for surface mount applications. It features a max on-state current of 0.5 A, non-repetitive peak on-state current of 8 A, and operates b/w -40 °C to 125°C. This device is perfect for controlling power in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,424 parts In-Stock

1+ parts

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3,424

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Vyrian

USA . 1,984 parts In-Stock

1+ parts

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1,984

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Anansix

USA . 1,775 parts In-Stock

1+ parts

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1,775

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 659 parts In-Stock

1+ parts

$3.742

100+ parts

-

1k+ parts

$3.367

10k+ parts

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659

$3.742

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$3.367

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MKK Technologies

India . 424 parts In-Stock

1+ parts

$7.036

100+ parts

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424

$7.036

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DigiPath Technology Company

USA . 424 parts In-Stock

1+ parts

$7.036

100+ parts

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424

$7.036

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Corphita

USA . 2,806 parts In-Stock

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2,806

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Parana Technologies

USA . 29 parts In-Stock

1+ parts

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$4.474

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29

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$4.474

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Overview

Elevate your designs with the P0111AN from STMicroelectronics, a leader in semiconductor innovation. This high-quality SCR combines reliability and performance, perfect for various applications like motor control and power management. Its compact surface mount design simplifies integration while ensuring top-notch efficiency. Trust STMicroelectronics for proven technology that maximizes value, minimizes energy waste, and enhances your project's potential. Choose P0111AN for excellence you can count on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures better thermal management and protects the internal components, enhancing longevity.

Maximum DC Gate Trigger Current: 0.025 mA

Low trigger current requirement allows for efficient driving circuits, reducing power consumption during operation.

Configuration: SINGLE

Single configuration simplifies circuit design while providing reliable performance, making it suitable for various applications.

Non Repetitive Peak On-state Current: 8 A

High peak on-state current capability allows the device to handle spikes, making it ideal for applications with fluctuating loads.

Surface Mount: YES

Surface mount technology enables compact designs and high-density circuit layouts, beneficial in modern electronics.

Package Shape: RECTANGULAR

Rectangular packaging aids in efficient board space usage and provides stability during assembly.

Terminal Form: GULL WING

Gull wing terminals simplify soldering processes and promote a stronger mechanical connection to the PCB.

Maximum On-state Current: 0.5 A

Adequate maximum on-state current allows the SCR to operate effectively in low to moderate power applications.

Maximum Leakage Current: 0.001 mA

Low leakage current minimizes power loss and enhances system efficiency, especially in battery-operated devices.

Repetitive Peak Reverse Voltage: 100 V

A high reverse voltage rating ensures reliability in various electrical environments, providing protection against breakdown.

No. of Terminals: 4

With four terminals, the SCR can be easily integrated into diverse circuit designs, facilitating flexibility in application.

Package Style (Meter): SMALL OUTLINE

Small outline packaging reduces the overall footprint in a design, making it perfect for space-constrained applications.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance allows the device to function reliably in demanding thermal environments.

Trigger Device Type: SCR

SCR's ability to handle high voltages and currents makes it suitable for industrial applications like motor controls.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures the SCR can perform in extreme conditions, enhancing its usability in outdoor and harsh applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers enhanced solderability and corrosion resistance, improving the reliability of connections.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility during PCB layout and ensures better thermal dissipation.

Maximum RMS On-state Current: 0.8 A

This rating supports higher continuous loads, making the SCR suitable for power-sensitive applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate voltage requirement allows for simple control circuit integration, reducing complexity in design.

Repetitive Peak Off-state Voltage: 100 V

This high off-state voltage rating ensures robust performance and reliability in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 25 V/µs

This specification indicates the SCR's capability to handle rapid changes in voltage, suitable for fast-switching applications.

Maximum Holding Current: 5 mA

Low holding current allows for efficient disengagement of the device, reducing power wastage.

Nominal Circuit Commutated Turn-off Time: 200 µs

Fast turn-off time ensures efficient switching in circuits, enhancing overall performance and responsiveness.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111AN attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

4

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111AN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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