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P0111AB

STMicroelectronics

P0111AB by STMicroelectronics

P0111AB by STMicroelectronics is a single SCR with max. on-state current of 0.5A and non-repetitive peak on-state current of 8A. It has a trigger voltage of 0.8V, suitable for applications requiring up to 100V repetitive peak reverse voltage in plastic/epoxy package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,302 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,302

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Vyrian

USA . 2,693 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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2,693

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Anansix

USA . 319 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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319

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 114 parts In-Stock

1+ parts

$2.536

100+ parts

-

1k+ parts

$2.283

10k+ parts

-

114

$2.536

-

$2.283

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MKK Technologies

India . 1,090 parts In-Stock

1+ parts

$4.770

100+ parts

-

1k+ parts

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10k+ parts

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1,090

$4.770

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DigiPath Technology Company

USA . 1,090 parts In-Stock

1+ parts

$4.770

100+ parts

-

1k+ parts

-

10k+ parts

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1,090

$4.770

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-

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Parana Technologies

USA . 1,986 parts In-Stock

1+ parts

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100+ parts

$3.033

1k+ parts

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1,986

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$3.033

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Corphita

USA . 623 parts In-Stock

1+ parts

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623

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Overview

Discover the reliability and performance of the P0111AB by STMicroelectronics, a top-tier manufacturer known for cutting-edge technology. As a Silicon Controlled Rectifier (SCR), this product offers high-quality plastic/epoxy packaging, making it ideal for various applications. With a single configuration and impressive on-state current capabilities, this SCR provides unparalleled power and efficiency. Trust in STMicroelectronics to deliver superior solutions that meet your needs and exceed your expectations. Elevate your projects with the P0111AB and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the SCR lightweight and durable, ensuring long-term reliability and easy handling.

Maximum DC Gate Trigger Current: 0.025 mA

The low maximum DC gate trigger current of 0.025 mA ensures efficient gate control and helps in minimizing power consumption, making this SCR suitable for energy-efficient applications.

Configuration: SINGLE

The single configuration simplifies the SCR's circuit design and makes it easier to integrate into various electronic systems, enhancing overall functionality and flexibility.

Non Repetitive Peak On-state Current: 8 A

The high non-repetitive peak on-state current capability of 8 A allows the SCR to handle large transient currents effectively, making it suitable for power management applications with varying load conditions.

Package Shape: ROUND

The round package shape is space-efficient and facilitates easy installation, making the SCR ideal for applications where compact size is essential.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure soldering connections and easy PCB mounting, improving the overall stability and reliability of the SCR in electronic circuits.

Maximum On-state Current: 0.5 A

The maximum on-state current rating of 0.5 A allows the SCR to handle moderate power loads effectively, making it suitable for various switching and control applications.

Maximum Leakage Current: 0.001 mA

The low maximum leakage current of 0.001 mA enhances the SCR's efficiency by minimizing unnecessary power losses and ensuring reliable performance in standby or off-state conditions.

Repetitive Peak Reverse Voltage: 100 V

The repetitive peak reverse voltage capability of 100 V ensures proper protection against reverse polarity conditions, making the SCR suitable for applications where reliable reverse voltage handling is essential.

No. of Terminals: 3

The 3 terminal design simplifies the connection process and offers greater flexibility in circuit configurations, making the SCR easy to integrate into various electronic designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and mechanical strength, making the SCR suitable for applications where thermal management and robust construction are important considerations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the SCR's reliability and performance in demanding environments with elevated temperatures, making it suitable for industrial and automotive applications.

Trigger Device Type: SCR

Being an SCR, the trigger device type ensures reliable and precise switching control, making the SCR suitable for applications where accurate and stable switching performance is required.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the SCR to operate in cold environments without compromising its performance, making it suitable for a wide range of temperature-sensitive applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections and long-term stability in various operating conditions.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly, making it easier to place the SCR in electronic circuits and ensuring proper signal routing for efficient operation.

Maximum RMS On-state Current: 0.8 A

The maximum RMS on-state current rating of 0.8 A allows the SCR to handle continuous AC currents effectively, making it suitable for applications with AC power sources and variable loads.

Maximum DC Gate Trigger Voltage: 0.8 V

The low maximum DC gate trigger voltage of 0.8 V ensures efficient gate triggering and reliable SCR operation, making it suitable for low-power control and switching applications.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage capability of 100 V ensures reliable isolation and protection in off-state conditions, making the SCR suitable for applications where voltage handling is critical.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The minimum critical rate of rise of off-state voltage of 50 V/us ensures the SCR's ability to respond quickly to rapid voltage changes, making it suitable for applications requiring fast switching and response times.

Maximum Holding Current: 5 mA

The maximum holding current rating of 5 mA ensures stable operation and prevents unintentional turn-off, making the SCR suitable for applications where reliable latching and holding are essential.

Nominal Circuit Commutated Turn-off Time: 200 us

The nominal circuit commutated turn-off time of 200 us ensures efficient turn-off and commutation processes, making the SCR suitable for high-speed and precision control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111AB attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

.025 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111AB Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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