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P0111AL

STMicroelectronics

P0111AL by STMicroelectronics

The STMicroelectronics P0111AL is a Silicon Controlled Rectifier with a max DC Gate Trigger Current of 0.025 mA and Max RMS On-state Current of 0.26 A. It is a single configuration SCR in a small outline package, suitable for applications requiring precise current control in temperatures ranging from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,067 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,067

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Digiode

USA . 2,473 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,473

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Anansix

USA . 516 parts In-Stock

1+ parts

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100+ parts

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516

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,394 parts In-Stock

1+ parts

$2.134

100+ parts

-

1k+ parts

$1.921

10k+ parts

-

1,394

$2.134

-

$1.921

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MKK Technologies

India . 1,494 parts In-Stock

1+ parts

$4.014

100+ parts

-

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1,494

$4.014

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DigiPath Technology Company

USA . 1,494 parts In-Stock

1+ parts

$4.014

100+ parts

-

1k+ parts

-

10k+ parts

-

1,494

$4.014

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-

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Parana Technologies

USA . 2,270 parts In-Stock

1+ parts

-

100+ parts

$2.552

1k+ parts

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2,270

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$2.552

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Corphita

USA . 1,615 parts In-Stock

1+ parts

-

100+ parts

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1,615

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Overview

Experience unparalleled quality and reliability with the P0111AL SCR by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-of-the-line products that exceed expectations. The P0111AL is perfect for a wide range of applications, offering customers superior performance and value. With its innovative design and advanced features, this SCR ensures optimal functionality and efficiency. Upgrade your electronics with the P0111AL and witness the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes this SCR lightweight and durable, ideal for various applications.

Maximum DC Gate Trigger Current: 0.025 mA

With a low gate trigger current, this SCR is energy-efficient and can be easily controlled.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it user-friendly.

Surface Mount: YES

Being surface mountable allows for easy and space-saving installation on PCBs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides stability and easier mounting on circuit boards.

Terminal Form: GULL WING

The gull wing terminal form facilitates better soldering and connection, ensuring a reliable electrical connection.

Repetitive Peak Reverse Voltage: 100 V

With a high reverse voltage capacity, this SCR can handle fluctuations in the reverse voltage without damage.

No. of Terminals: 3

The 3 terminals provide the necessary connectivity for proper functioning in a simple and efficient manner.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures without compromising performance.

Trigger Device Type: SCR

Being an SCR, this device offers high reliability and robust performance in various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows this SCR to function in cold environments without any issues.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and enhances the overall usability of this SCR.

Maximum RMS On-state Current: 0.26 A

With a high maximum RMS on-state current, this SCR can handle substantial current loads safely and efficiently.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage rating of 100 V ensures reliable performance and protection against voltage spikes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0111AL attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Maximum DC Gate Trigger Current:

.025 mA

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.26 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0111AL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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