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74V2T02STR

STMicroelectronics

74V2T02STR by STMicroelectronics

74V2T02STR by STMicroelectronics is a dual-input CMOS logic gate with a propagation delay of just 9.5 ns, ideal for high-speed applications. It operates at a nominal voltage of 5V and supports temperatures from -55 °C to 125°C. Its compact SOIC package makes it suitable for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,215 parts In-Stock

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4,215

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Digiode

USA . 2,743 parts In-Stock

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2,743

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Anansix

USA . 1,799 parts In-Stock

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1,799

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 277 parts In-Stock

1+ parts

$0.508

100+ parts

-

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-

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277

$0.508

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AZTECH Wire

Italy . 813 parts In-Stock

1+ parts

$20.410

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-

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813

$20.410

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IDEA Electronic Components Group

UK . 1 parts In-Stock

1+ parts

$30.449

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-

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$27.404

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1

$30.449

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$27.404

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Native Components

USA . 403 parts In-Stock

1+ parts

$53.660

100+ parts

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$51.514

403

$53.660

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-

$51.514

MKK Technologies

India . 675 parts In-Stock

1+ parts

$57.258

100+ parts

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675

$57.258

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DigiPath Technology Company

USA . 675 parts In-Stock

1+ parts

$57.258

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675

$57.258

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Northwest PG Solutions

USA . 1,986 parts In-Stock

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$59.026

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1,986

$59.026

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QUARKTWIN TECHNOLOGY LTD

USA . 26,717 parts In-Stock

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Corphita

USA . 2,284 parts In-Stock

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2,284

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Parana Technologies

USA . 12 parts In-Stock

1+ parts

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$36.407

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12

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$36.407

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Overview

Unlock unparalleled performance with the 74V2T02STR from STMicroelectronics, a trusted name in innovative electronic solutions. This dual-input logic gate delivers swift response times and remarkable reliability, making it ideal for automotive, industrial, and consumer applications. Its compact design ensures easy integration into your projects, while its military-grade specifications guarantee durability under extreme conditions. Elevate your designs with ST's commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures longevity and reliability in various applications.

Propagation Delay At Nominal Supply: 9.5 ns

A low propagation delay enhances speed and efficiency, making the logic gate suitable for high-speed digital circuits.

Surface Mount: YES

Surface mount capability allows for easier integration into modern circuit designs, saving space on PCBs.

No. of Functions: 2

With two functions, it provides versatility in applications, reducing the number of components needed.

No. of Inputs: 2

Having two inputs supports basic logic operations, suitable for a wide range of digital applications.

Package Shape: RECTANGULAR

The rectangular shape is optimized for easy placement on circuit boards, aiding in efficient design layout.

Nominal Supply Voltage / Vsup (V): 5

Standard nominal supply voltage makes it compatible with many existing systems and power sources.

Power Supplies (V): 5

A fixed power supply of 5V simplifies design requirements for designers and engineers.

No. of Terminals: 8

The 8-terminal configuration allows for flexible connections in various circuit designs.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

This compact and low-profile design is perfect for space-constrained applications.

Maximum I (ol): 8 Amp

With the capability to handle up to 8 amps, it supports robust performance under significant loads.

Propagation Delay (tpd): 9.5 ns

The consistent low propagation delay ensures reliable high-speed performance across different applications.

Maximum Operating Temperature: 125 °C

A high operating temperature range allows the component to function effectively in demanding environments.

Minimum Operating Temperature: -55 °C

The low minimum temperature ensures operation in extreme conditions, making it suitable for military and aerospace applications.

Terminal Finish: TIN

Tin finish offers excellent solderability, ensuring reliable connections during assembly.

Terminal Position: DUAL

Dual terminal positioning provides design flexibility for various layouts and designs.

Maximum Seated Height: 1.45 mm

A low seated height helps in maintaining low-profile designs, crucial for compact electronics.

Width: 1.625 mm

A narrow width aids in space-efficient PCB designs while maintaining functionality.

Minimum Supply Voltage (Vsup): 4.5 V

Allows operation at a lower voltage threshold, enhancing compatibility with a range of devices.

Peak Reflow Temperature °C: 260

A high peak reflow temperature indicates robustness during the soldering process, reducing risk of damage.

Length: 2.9 mm

Compact length promotes space-saving designs, making it favored in portable electronic devices.

Temperature Grade: MILITARY

The military-grade rating assures the component can withstand extreme conditions, suitable for defense and aerospace applications.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, enhancing circuit efficiency.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and repair, making assembly and maintenance convenient.

Packing Method: TR

The TR packing method allows for efficient handling and processing during manufacturing.

Terminal Pitch: 0.65 mm

A smaller terminal pitch enables denser packing of components, ideal for compact circuit design.

Maximum Supply Voltage (Vsup): 5.5 V

This allows greater flexibility in voltage supply, accommodating various power circuits.

Technical Specifications

Logic Gates 74V2T02STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

2.9 mm

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.1

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

9.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.625 mm

Trade Compliance

74V2T02STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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