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2SC4083T106N

ROHM

2SC4083T106N by ROHM

ROHM 2SC4083T106N is a NPN RF BJT with VCEsat of 0.5V, hFE of 56, and fT of 3200MHz. Ideal for S Band applications like amplifiers due to its low power dissipation, high transition frequency, and small outline package.

Median Price

$0.145

Lifecycle Status

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12

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DigiKey

USA . 24,147 parts In-Stock

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$0.400

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$0.154

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$0.102

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24,147

$0.400

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Master Electronics

USA . 2,100 parts In-Stock

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$0.802

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$0.426

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$0.802

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Verical

USA . 3,000 parts In-Stock

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$0.121

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$0.118

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Chip1Stop

Japan . 2,750 parts In-Stock

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$0.106

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$0.081

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$0.106

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Element14

Singapore . 1,586 parts In-Stock

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$0.169

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$0.126

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$0.090

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Farnell

UK . 1,471 parts In-Stock

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$0.116

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$0.070

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Nova Conductors

Japan . 94 parts In-Stock

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$0.090

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Vyrian

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VNN

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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Ampacity Inc.

Singapore . 12,016 parts In-Stock

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.189

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$0.159

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$0.080

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$0.072

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$0.159

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$0.072

Continental Prestige Electronics

USA . 1,776 parts In-Stock

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$0.257

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$0.102

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$0.062

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Perfect Parts

USA . 47,609 parts In-Stock

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Epart123

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$0.094

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

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Netroflash

USA . 50 parts In-Stock

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$0.088

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$0.086

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$0.084

50

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$0.088

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$0.084

Overview

Unlock new possibilities with the 2SC4083T106N by ROHM, a top-of-the-line RF Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor offers exceptional performance in amplifier applications, providing reliable and efficient signal amplification in the S Band frequency range. With its high-quality construction and advanced features, this transistor guarantees optimal functionality and durability, making it the ideal choice for professionals seeking top-notch components. Elevate your projects with the unmatched value and benefits of the 2SC4083T106N by ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can protect the internal components of the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss in the transistor and enhances efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular package shape saves space on the PCB and provides a more compact design for electronic devices.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable solder connections during PCB assembly.

Highest Frequency Band: S BAND

S Band frequency range is suitable for a variety of high-frequency applications, including radar and communication systems.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function in an electronic circuit.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation ensures the transistor can handle power effectively without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves PCB space and allows for compact designs in electronic devices.

Minimum DC Current Gain (hFE): 56

Higher DC current gain ensures stable and reliable amplification performance in the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures the reliability of the transistor in various operating conditions.

Maximum Collector-Base Capacitance: 1.5 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in the transistor.

Maximum Collector-Emitter Voltage: 11 V

High collector-emitter voltage rating provides robustness against voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and electrical performance in the transistor.

Maximum Collector Current (IC): 0.05 A

High collector current rating allows for handling larger current loads in the transistor without compromising performance.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Tin/Silver/Copper terminal finish ensures good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and allows for easy connections to other components.

Maximum Time At Peak Reflow Temperature (s): 10

Short time at peak reflow temperature prevents component damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering and component mounting on PCB.

Nominal Transition Frequency (fT): 3200 MHz

High nominal transition frequency enables the transistor to operate effectively in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4083T106N attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

11 V

Configuration:

Minimum DC Current Gain (hFE):

56

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SC4083T106N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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