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2SC4226-T1

Renesas Electronics

2SC4226-T1 by Renesas Electronics

2SC4226-T1 by Renesas Electronics is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 4500 MHz and can handle a collector current of 0.1 A, making it suitable for ultra-high frequency amplifier applications in small outline packages.

Median Price

$0.117

Lifecycle Status

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Whistler Technology

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Technoshack Inc.

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Sunrise Surplus Inc.

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Speed Components Ltd

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ComSIT Distribution GmbH

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Sensible Micro Corp

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Bristol Electronics

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Ampacity Inc.

Singapore . 137 parts In-Stock

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Overview

Unlock unparalleled performance with the 2SC4226-T1 RF Small Signal Bipolar Junction Transistor from Renesas Electronics. Known for their superior quality and reliability, Renesas Electronics delivers cutting-edge technology in a compact package. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor offers customers unmatched value and efficiency. Elevate your projects to the next level with the 2SC4226-T1 and experience the difference Renesas Electronics can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, suitable for portable and high-performance applications.

Polarity or Channel Type: NPN

NPN polarity allows for amplification of signals in various electronic circuits, making it a versatile choice for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration process, making it easier to incorporate into various electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in signal amplification tasks.

Surface Mount: YES

Surface mount capability enables easy and efficient soldering onto circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and efficient placement on PCBs, optimizing space utilization in electronic designs.

Terminal Form: GULL WING

Gull wing terminal form offers secure and reliable connections, enhancing the overall stability and longevity of the product in operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ultra high frequency band support enables high-speed signal processing and transmission, making it suitable for demanding RF applications.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels, ensuring reliable performance under varying loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style minimizes footprint on PCBs, making it ideal for compact electronic devices and space-constrained applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures stable and consistent amplification performance, providing reliable signal amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable operation in various conditions.

Maximum Collector-Base Capacitance: 1.5 pF

Low collector-base capacitance of 1.5 pF minimizes signal distortion and ensures high-frequency performance, making it suitable for RF applications.

Maximum Collector-Emitter Voltage: 12 V

With a maximum collector-emitter voltage of 12 V, this transistor can handle moderate voltage levels, making it suitable for a wide range of electronic circuits.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability and performance, ensuring long-term stability and consistent operation in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1 A allows for handling moderate current levels, making it suitable for various low-power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and ensures secure connections for reliable performance in electronic systems.

Nominal Transition Frequency (fT): 4500 MHz

High nominal transition frequency of 4500 MHz enables high-speed signal processing and amplification, making it suitable for demanding RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4226-T1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4226-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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