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2SA1576U3HZGT106R

ROHM

2SA1576U3HZGT106R by ROHM

ROHM 2SA1576U3HZGT106R is a PNP BJT transistor with hFE of 180, VCE of 50V, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mount assembly. AEC-Q101 compliant for automotive use.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 2,125 parts In-Stock

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$0.310

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$0.117

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$0.076

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$0.047

2,125

$0.310

$0.117

$0.076

$0.047

TTI

USA . 18,000 parts In-Stock

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$0.039

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$0.039

DigiKey

USA . 4,651 parts In-Stock

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$0.054

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$0.054

Verical

USA . 2,890 parts In-Stock

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$0.104

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$0.067

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$0.043

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Chip1Stop

Japan . 490 parts In-Stock

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$0.078

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$0.077

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Distributors (In-Stock)

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TME

Poland . 2,958 parts In-Stock

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$0.190

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$0.078

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$0.058

10k+ parts

$0.039

2,958

$0.190

$0.078

$0.058

$0.039

ComSIT Distribution GmbH

Germany . 843,212 parts In-Stock

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Cyclops Electronics Ltd

UK . 24,000 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.035

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$0.035

ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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VNN

France . 682 parts In-Stock

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Nova Conductors

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CoreStaff

Japan . 9 parts In-Stock

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$0.070

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$0.032

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$0.027

9

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$0.027

Ampacity Inc.

Singapore . 2,945 parts In-Stock

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$0.135

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Kepictronics

USA . 27,000 parts In-Stock

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RC Electronics

USA . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,977 parts In-Stock

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Epart123

USA . 24,000 parts In-Stock

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$0.080

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$0.080

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$0.080

GreenTree Electronics

Israel . 24,000 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Perfect Parts

USA . 56 parts In-Stock

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Overview

Maximize the performance of your amplifier with the 2SA1576U3HZGT106R by ROHM. Known for their superior quality and reliability, ROHM's small signal bipolar junction transistors offer unparalleled precision and efficiency. Ideal for a variety of applications, this PNP transistor provides a seamless amplification experience with its high DC current gain and low collector-emitter voltage. Trust ROHM to deliver unmatched value and exceptional results for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into existing circuits and compatibility with other PNP transistors.

Configuration: SINGLE

With a single configuration, this transistor is easy to manage and integrate into circuits, simplifying the overall design.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides high gain and low noise performance, making it ideal for audio and signal amplification.

Surface Mount: YES

Being surface mountable allows for easy mounting onto PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to handle and place on a PCB, ensuring proper alignment and mounting.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of solder joint failures.

No. of Terminals: 3

Having 3 terminals simplifies the electrical connections and ensures proper functionality in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables high-density circuit designs.

Minimum DC Current Gain (hFE): 180

The minimum DC current gain of 180 ensures consistent and stable amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a wide range of voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

The use of silicon material for the transistor element ensures high performance, reliability, and temperature stability.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A allows for handling moderate power levels, suitable for various amplifier and signal processing tasks.

Terminal Position: DUAL

The dual terminal position provides flexibility in mounting and connection options, making it easier to integrate into different circuit layouts.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and performance in automotive and other demanding applications.

Nominal Transition Frequency (fT): 140 MHz

With a nominal transition frequency of 140 MHz, this transistor can handle high-frequency signals with ease, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1576U3HZGT106R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1576U3HZGT106R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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