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NRVUB1620CTRT4G

Onsemi

NRVUB1620CTRT4G by Onsemi

NRVUB1620CTRT4G by Onsemi is a common anode diode with 0.085 us reverse recovery time and 5 uA reverse current. Ideal for ultra-fast soft recovery power applications, it has a max operating temperature of 175 °C and peak reflow temperature of 260 °C. With a max output current of 8 A and repetitive peak reverse voltage of 200 V, this rectifier diode is designed for high-performance electronic systems.

Median Price

$3.560

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 747 parts In-Stock

1+ parts

$3.560

100+ parts

$2.440

1k+ parts

$1.230

10k+ parts

$1.180

747

$3.560

$2.440

$1.230

$1.180

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,507 parts In-Stock

1+ parts

$2.632

100+ parts

-

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1,507

$2.632

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Chip Stock

USA . 73,000 parts In-Stock

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73,000

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Flip Electronics

USA . 34,400 parts In-Stock

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34,400

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Vyrian

USA . 7,157 parts In-Stock

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7,157

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Distributors (Availability)

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Corphita

USA . 2,387 parts In-Stock

1+ parts

$2.493

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-

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2,387

$2.493

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Corohmni

South Africa . 412 parts In-Stock

1+ parts

$2.770

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412

$2.770

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Microchip USA

USA . 7,943 parts In-Stock

1+ parts

$9.947

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7,943

$9.947

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Kulean Microsystems

USA . 6,834 parts In-Stock

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6,834

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Problanco Electronics

Mexico . 4,537 parts In-Stock

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4,537

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Perfect Parts

USA . 4,200 parts In-Stock

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4,200

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SupplyDigital Components

Austria . 3,101 parts In-Stock

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3,101

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UHIMA Technologies

Türkiye . 686 parts In-Stock

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686

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Authorized Procurement Solutions

USA . 650 parts In-Stock

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650

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TANS Electronics

Latvia . 364 parts In-Stock

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364

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Kepictronics

USA . 218 parts In-Stock

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218

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Overview

Discover the NRVUB1620CTRT4G by Onsemi, a high-quality diode rectifier that offers ultra-fast soft recovery power for a wide range of applications. With a maximum operating temperature of 175 °C and a maximum output current of 8A, this diode delivers reliable performance in demanding environments. Manufactured by Onsemi, a trusted industry leader, this product ensures top-notch quality and reliability. Whether you're designing power supplies, motor drives, or inverters, the NRVUB1620CTRT4G provides unmatched value and efficiency for your projects. Choose Onsemi for superior performance and peace of mind in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

Allows for efficient current flow and easy integration into circuit designs.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 0.085 us

Ensures fast switching capability, ideal for high-speed applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Saves space and allows for compact design layouts.

No. of Terminals: 2

Simplifies connection to external circuitry.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited.

Application: ULTRA FAST SOFT RECOVERY POWER

Suitable for high-power and high-frequency applications that require fast recovery times.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various operating conditions.

Minimum Operating Temperature: -65 °C

Capable of operating in extreme cold temperatures.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish.

Terminal Position: SINGLE

Simplifies installation and connection in circuits.

Case Connection: ANODE

Helps in proper orientation and connection of the diode in circuit designs.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 8 A

Capable of handling high output currents, suitable for power applications.

Terminal Form: GULL WING

Allows for easy soldering and secure mounting on circuit boards.

No. of Elements: 2

Provides dual functionality in a single package, increasing design flexibility.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages without breakdown, making it suitable for various applications.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling high peak currents without damage, suitable for surge protection applications.

Diode Element Material: SILICON

Offers reliable and stable performance with low leakage currents.

Technical Specifications

Diodes & Rectifiers NRVUB1620CTRT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY POWER

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUB1620CTRT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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