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NB100LVEP221MNG

Onsemi

NB100LVEP221MNG by Onsemi

NB100LVEP221MNG Clock Driver by Onsemi features 0.8ns propagation delay, 52 terminals, and operates at -40 to 85 °C. Ideal for industrial applications requiring ECL technology with differential mux input conditioning and a supply voltage range of 2.375V to 3.8V.

Median Price

$10.490

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,243 parts In-Stock

1+ parts

$10.490

100+ parts

$10.280

1k+ parts

$10.070

10k+ parts

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1,243

$10.490

$10.280

$10.070

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Distributors (In-Stock)

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Digiode

USA . 2,114 parts In-Stock

1+ parts

$9.966

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2,114

$9.966

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Vyrian

USA . 3,582 parts In-Stock

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Bristol Electronics

USA . 154 parts In-Stock

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Prism Electronics

USA . 26 parts In-Stock

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Electronics Depot

USA . 7 parts In-Stock

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7

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Distributors (Availability)

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Corphita

USA . 1,353 parts In-Stock

1+ parts

$9.441

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$9.441

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Corohmni

South Africa . 136 parts In-Stock

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$10.490

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136

$10.490

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AZTECH Wire

Italy . 922 parts In-Stock

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$12.450

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922

$12.450

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Problanco Electronics

Mexico . 6,646 parts In-Stock

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Kulean Microsystems

USA . 3,374 parts In-Stock

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TANS Electronics

Latvia . 1,931 parts In-Stock

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SupplyDigital Components

Austria . 280 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Kepictronics

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Microchip USA

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Perfect Parts

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Overview

Enhance the performance of your clock systems with the NB100LVEP221MNG by Onsemi, a top-quality Clock Drivers & Buffers product. Manufactured by Onsemi, a trusted industry leader, this chip carrier with a very thin profile offers a propagation delay of just 0.71 ns, ensuring efficient signal transmission. Ideal for applications requiring differential mux input conditioning, this device operates at industrial temperatures and provides 20 true outputs. Experience seamless clock synchronization and improved system reliability with the NB100LVEP221MNG - the perfect solution for all your clock driver needs.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 0.8 ns

Low propagation delay ensures accurate timing and synchronization in clock distribution systems.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly, saving space and reducing production costs.

Input Conditioning: DIFFERENTIAL MUX

Differential multiplexer input conditioning helps in reducing noise and interference, ensuring reliable signal transmission.

Nominal Supply Voltage / Vsup (V): 2.5

Stable nominal supply voltage of 2.5V ensures consistent performance and compatibility with a wide range of systems.

Power Supplies (V): -2.5/-3.3/2.5/3.3

Supports multiple power supply options, offering flexibility in system design and integration.

Package Shape: SQUARE

Square package shape allows for easy placement and routing on the PCB, optimizing board layout and signal integrity.

Minimum Operating Temperature: -40 °C

Wide operating temperature range from -40 °C to 85°C ensures reliability in harsh environmental conditions.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures stable performance in industrial applications.

Technology: ECL

ECL technology offers high-speed operation and low power consumption, suitable for demanding clock distribution systems.

Technical Specifications

Clock Drivers & Buffers NB100LVEP221MNG attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.8V

Family:

100LVE

Input Conditioning:

DIFFERENTIAL MUX

JESD-30 Code:

S-XQCC-N52

JESD-609 Code:

e3

Length:

8 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

52

No. of True Outputs:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC52,.31SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

-2.5/-3.3/2.5/3.3

Propagation Delay At Nominal Supply:

.8 ns

Propagation Delay (tpd):

.71 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.05 ns

Maximum Seated Height:

1 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.8 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

NB100LVEP221MNG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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