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MGP19N35CL

Onsemi

MGP19N35CL by Onsemi

MGP19N35CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 380V and Max Collector Current of 19A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a Max Power Dissipation of 165W and operating temperature up to 175 °C, this transistor offers reliable performance in demanding environments.

Median Price

$0.617

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,050 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.493

10k+ parts

$0.440

17,050

-

$0.595

$0.493

$0.440

DigiKey

USA . 17,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.740

10k+ parts

-

17,050

-

-

$0.740

-

Verical

USA . 17,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.617

10k+ parts

$0.550

17,050

-

-

$0.617

$0.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,340 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

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-

1,340

$0.404

-

-

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Digiode

USA . 1,675 parts In-Stock

1+ parts

$0.463

100+ parts

-

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-

10k+ parts

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1,675

$0.463

-

-

-

DigiKey Marketplace

USA . 17,050 parts In-Stock

1+ parts

-

100+ parts

$0.510

1k+ parts

-

10k+ parts

-

17,050

-

$0.510

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 197 parts In-Stock

1+ parts

$0.404

100+ parts

-

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197

$0.404

-

-

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Corphita

USA . 1,779 parts In-Stock

1+ parts

$0.438

100+ parts

-

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1,779

$0.438

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 29,085 parts In-Stock

1+ parts

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29,085

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Continental Prestige Electronics

USA . 17,050 parts In-Stock

1+ parts

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100+ parts

$0.466

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17,050

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$0.466

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Kulean Microsystems

USA . 7,952 parts In-Stock

1+ parts

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7,952

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SupplyDigital Components

Austria . 6,337 parts In-Stock

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6,337

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Problanco Electronics

Mexico . 5,219 parts In-Stock

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5,219

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TANS Electronics

Latvia . 1,664 parts In-Stock

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1,664

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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Overview

Enhance your automotive ignition systems with the MGP19N35CL by Onsemi, a top-quality Insulated Gate Bipolar Transistor designed for optimal performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this N-CHANNEL transistor offers a single configuration with a built-in diode and resistor, providing seamless integration and enhanced durability. Perfect for automotive ignition applications, this transistor delivers maximum power dissipation of 165W and a maximum collector-emitter voltage of 380V. Upgrade your systems today with the MGP19N35CL and experience unparalleled efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, making it suitable for automotive ignition applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and faster switching capabilities, making them efficient for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor help in protecting the IGBT and improve its performance in automotive ignition applications.

Maximum Rise Time (tr): 6000 ns

The fast rise time ensures quick switching of the IGBT, which is crucial for precise ignition timing in automotive systems.

Maximum Fall Time (tf): 22000 ns

The slow fall time helps in reducing switching losses and improving efficiency in automotive ignition systems.

Maximum Power Dissipation (Abs): 165 W

With a high power dissipation capability, this IGBT can handle the power requirements of automotive ignition systems.

Maximum Operating Temperature: 175 °C

The IGBT can operate at high temperatures without overheating, ensuring reliability in automotive applications.

Maximum Collector-Emitter Voltage: 380 V

The high voltage rating allows the IGBT to handle the voltage requirements of automotive ignition systems.

Maximum Collector Current (IC): 19 A

The high collector current rating ensures that the IGBT can handle the current demands of automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP19N35CL attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

380 V

Maximum Fall Time (tf):

22000 ns

Maximum Gate-Emitter Threshold Voltage:

2 V

Maximum Gate-Emitter Voltage:

22 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

6000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

25000 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

MGP19N35CL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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