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MGP15N43CL

Onsemi

MGP15N43CL by Onsemi

MGP15N43CL by Onsemi is an N-CHANNEL IGBT with 460V VCE, 15A IC, and 136W Ptot. Ideal for automotive ignition applications due to its built-in diode and flange mount package style. Features include 21000ns toff and 5000ns ton, suitable for high-power switching in automotive systems.

Median Price

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1k+

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Vyrian

USA . 2,115 parts In-Stock

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Digiode

USA . 1,101 parts In-Stock

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Kulean Microsystems

USA . 8,354 parts In-Stock

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Problanco Electronics

Mexico . 6,320 parts In-Stock

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TANS Electronics

Latvia . 6,247 parts In-Stock

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SupplyDigital Components

Austria . 3,006 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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Corohmni

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Overview

Unleash the power of automotive ignition systems with the MGP15N43CL by Onsemi. Crafted with precision and reliability, this Insulated Gate Bipolar Transistor (IGBT) offers unmatched performance and durability for your automotive applications. With a maximum collector-emitter voltage of 460V and a maximum gate-emitter voltage of 17V, this N-CHANNEL transistor is designed to deliver optimal results under high temperatures, making it the top choice for automotive ignition systems. Trust Onsemi's expertise and elevate your projects with the MGP15N43CL today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability for reliable performance in automotive ignition applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and faster switching speeds compared to P-channel, making them suitable for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing reverse current flow and improves the overall efficiency of the IGBT.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in such applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easier mounting and installation in automotive ignition systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections for automotive ignition applications.

Nominal Turn Off Time (toff): 21000 ns

Fast turn-off time ensures efficient switching and minimizes power losses in the IGBT.

Maximum Power Dissipation (Abs): 136 W

High power dissipation capability allows the IGBT to handle high power loads in automotive ignition systems.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting in automotive ignition systems.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures common in automotive environments without compromising performance.

Maximum Collector-Emitter Voltage: 460 V

High collector-emitter voltage rating provides greater flexibility in automotive ignition system designs.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and reliability for consistent performance in automotive ignition applications.

Maximum Gate-Emitter Voltage: 17 V

Sufficient gate-emitter voltage rating for reliable control and switching of the IGBT.

Maximum Collector Current (IC): 15 A

High collector current rating allows the IGBT to handle large current loads in automotive ignition systems.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

Low gate-emitter threshold voltage enables efficient switching and control of the IGBT.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and corrosion resistance for reliable terminal connections in automotive ignition systems.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures correct connections in automotive ignition systems.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and thermal management in automotive ignition applications.

Nominal Turn On Time (ton): 5000 ns

Fast turn-on time ensures quick and accurate switching of the IGBT in automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP15N43CL attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

460 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

17 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

21000 ns

Nominal Turn On Time (ton):

5000 ns

Trade Compliance

MGP15N43CL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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