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MGP15N35CLG

Onsemi

MGP15N35CLG by Onsemi

MGP15N35CLG by Onsemi is an N-CHANNEL IGBT with 380V max collector-emitter voltage and 15A max collector current. It features a built-in diode and resistor, ideal for automotive ignition applications. The transistor has a turn-off time of 20500ns and turn-on time of 6000ns, making it suitable for high-power switching needs.

Median Price

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1k+

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Vyrian

USA . 229 parts In-Stock

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Problanco Electronics

Mexico . 7,646 parts In-Stock

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TANS Electronics

Latvia . 7,498 parts In-Stock

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Kulean Microsystems

USA . 7,369 parts In-Stock

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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SupplyDigital Components

Austria . 448 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Corphita

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Overview

Enhance your automotive ignition systems with the MGP15N35CLG by Onsemi. This high-quality Insulated Gate Bipolar Transistor (IGBT) offers unmatched performance and reliability, thanks to Onsemi's renowned manufacturing standards. With a built-in diode and resistor, this N-CHANNEL transistor is perfect for automotive applications. Upgrade your products with the MGP15N35CLG and experience the value of superior quality and efficiency that Onsemi provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability in automotive applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current conduction and control, ideal for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating necessary components in one package, reducing external components and increasing space efficiency.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring compatibility and optimal performance in such applications.

Package Shape: RECTANGULAR

Facilitates easier mounting and integration into automotive ignition systems.

Terminal Form: THROUGH-HOLE

Allows for easy and secure through-hole PCB mounting, ensuring stable connections in automotive environments.

Nominal Turn Off Time (toff): 20500 ns

Provides fast turn-off time, crucial for efficient switching and reducing power loss in automotive ignition circuits.

No. of Terminals: 3

Simple and straightforward connection setup, making installation easier and quicker in automotive applications.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting on a PCB or heat sink, enhancing thermal performance and reliability in automotive ignition systems.

Maximum Collector-Emitter Voltage: 380 V

Ability to handle high voltage levels commonly found in automotive applications, ensuring safety and reliability under varying operating conditions.

Transistor Element Material: SILICON

Highly reliable and efficient material for the transistor element, providing consistent performance in automotive ignition systems.

Maximum Collector Current (IC): 15 A

Sufficient current handling capability for automotive ignition systems, ensuring reliable performance under varying load conditions.

Terminal Position: SINGLE

Simplified connection setup and easy integration into automotive ignition circuits, reducing complexity and potential points of failure.

Case Connection: COLLECTOR

Optimal connection for automotive ignition circuits, ensuring efficient current flow and performance.

Nominal Turn On Time (ton): 6000 ns

Provides fast turn-on time, essential for quick and reliable operation in automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP15N35CLG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

VOLTAGE CLAMPING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

380 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

20500 ns

Nominal Turn On Time (ton):

6000 ns

Trade Compliance

MGP15N35CLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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