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MGP11N60ED

Onsemi

MGP11N60ED by Onsemi

MGP11N60ED by Onsemi is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 96W Pd. Ideal for MOTOR CONTROL applications due to its built-in diode and fast ton of 68ns. Package style is FLANGE MOUNT with through-hole terminals.

Median Price

$0.581

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 178 parts In-Stock

1+ parts

-

100+ parts

$0.581

1k+ parts

$0.482

10k+ parts

$0.430

178

-

$0.581

$0.482

$0.430

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 854 parts In-Stock

1+ parts

$0.453

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-

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854

$0.453

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Vyrian

USA . 4,106 parts In-Stock

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4,106

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A2Z Electronics, Inc.

USA . 1,493 parts In-Stock

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1,493

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Bristol Electronics

USA . 1,493 parts In-Stock

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1,493

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,223 parts In-Stock

1+ parts

$0.429

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2,223

$0.429

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Corohmni

South Africa . 109 parts In-Stock

1+ parts

$0.477

100+ parts

-

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109

$0.477

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.678

100+ parts

$1.661

1k+ parts

$1.594

10k+ parts

-

2,000

$1.678

$1.661

$1.594

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Problanco Electronics

Mexico . 7,455 parts In-Stock

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7,455

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TANS Electronics

Latvia . 7,293 parts In-Stock

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7,293

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Kulean Microsystems

USA . 6,895 parts In-Stock

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6,895

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SupplyDigital Components

Austria . 5,388 parts In-Stock

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5,388

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UHIMA Technologies

Türkiye . 684 parts In-Stock

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684

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Overview

Upgrade your motor control systems with the MGP11N60ED by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in their insulated gate bipolar transistors (IGBT). This N-channel transistor with a built-in diode offers exceptional performance, ensuring smooth operation and efficiency. Whether you're looking to enhance your industrial equipment or automotive applications, the MGP11N60ED provides the power and precision you need. Trust Onsemi for superior technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and thermal management, making the product suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency, making them a good choice for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and improves efficiency in motor control applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, providing reliable and efficient performance.

Maximum Power Dissipation (Abs): 96 W

With a high maximum power dissipation, the product can handle high power loads effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the product to operate in harsh environments without compromising performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP11N60ED attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

ULTRAFAST, HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

442 ns

Nominal Turn On Time (ton):

68 ns

Trade Compliance

MGP11N60ED Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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