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MGP15N38CL

Onsemi

MGP15N38CL by Onsemi

MGP15N38CL by Onsemi is an N-CHANNEL IGBT with 350V max collector-emitter voltage, 15A max collector current, and 136W max power dissipation. It is designed for automotive ignition applications due to its single configuration with built-in diode and flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,909 parts In-Stock

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Digiode

USA . 810 parts In-Stock

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TANS Electronics

Latvia . 4,363 parts In-Stock

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Kulean Microsystems

USA . 4,319 parts In-Stock

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SupplyDigital Components

Austria . 3,334 parts In-Stock

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Problanco Electronics

Mexico . 2,639 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 620 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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Overview

Elevate your automotive ignition systems with the MGP15N38CL by Onsemi. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor boasts unparalleled quality and reliability, making it a top choice for industry professionals. With its N-CHANNEL configuration and built-in diode, this transistor offers seamless performance and efficiency. Ideal for automotive ignition applications, this product delivers exceptional power dissipation and temperature resistance, ensuring optimal functionality in any environment. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations and elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for automotive applications where weight and reliability are important factors.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs offer lower conduction losses and faster switching speeds compared to P-Channel IGBTs, making them more efficient for high power applications like automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves efficiency by reducing parasitic components, making this IGBT a convenient choice for automotive ignition applications.

Maximum Power Dissipation (Abs): 136 W

With a high power dissipation capability of 136 W, this IGBT can handle high power levels reliably, ensuring stable operation in automotive ignition systems.

Maximum Operating Temperature: 175 °C

The ability to operate at temperatures up to 175 °C ensures reliable performance in automotive environments where temperature variations are common.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP15N38CL attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

17 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Trade Compliance

MGP15N38CL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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