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MGP15N43CLT4

Onsemi

MGP15N43CLT4 by Onsemi

MGP15N43CLT4 by Onsemi is an N-CHANNEL IGBT with 400V VCE, 15A IC, and 136W Pd. It operates up to 175 °C making it ideal for high-power applications requiring efficient switching capabilities in surface-mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,133 parts In-Stock

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Digiode

USA . 1,165 parts In-Stock

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SupplyDigital Components

Austria . 8,074 parts In-Stock

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Problanco Electronics

Mexico . 6,249 parts In-Stock

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Kulean Microsystems

USA . 5,197 parts In-Stock

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TANS Electronics

Latvia . 4,393 parts In-Stock

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Corphita

USA . 1,706 parts In-Stock

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UHIMA Technologies

Türkiye . 494 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Overview

Experience superior performance and reliability with the MGP15N43CLT4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like this N-CHANNEL surface mount device. With a maximum power dissipation of 136 W and operating temperature of 175 °C, this IGBT offers unmatched efficiency and durability for various applications. Trust Onsemi's expertise and invest in the MGP15N43CLT4 for high-performance solutions that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for lower on-state voltage, higher switching speed, and better efficiency compared to P-CHANNEL IGBTs, making them a preferred choice for many high power applications.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on circuit boards, saving space and enabling high-density layouts in electronic devices.

Maximum Power Dissipation (Abs): 136 W

With a high maximum power dissipation, this IGBT can handle high power levels efficiently without overheating, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this IGBT to operate under harsh conditions without degradation, making it suitable for industrial and automotive applications where temperature can vary.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating ensures that this IGBT can handle high voltage levels, making it suitable for applications where high voltage switching is required.

Maximum Collector Current (IC): 15 A

With a high maximum collector current rating, this IGBT can handle high current levels, making it suitable for power electronics applications that require high current switching.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

The low gate-emitter threshold voltage ensures that this IGBT can be easily controlled with low voltage signals, making it suitable for driving circuits with lower voltage levels.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGP15N43CLT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Trade Compliance

MGP15N43CLT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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