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MC74VHC1G132DF2G

Onsemi

MC74VHC1G132DF2G by Onsemi

MC74VHC1G132DF2G by Onsemi is a CMOS logic gate with 2 inputs, 12.3 ns propagation delay, and 19.6 ns tpd. It operates at -55 to 125 °C and has a Vsup range of 2-5.5 V. Ideal for military-grade applications requiring Schmitt Trigger functionality in a small outline package.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,386 parts In-Stock

1+ parts

$0.130

100+ parts

$0.122

1k+ parts

$0.111

10k+ parts

-

5,386

$0.130

$0.122

$0.111

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Distributors (In-Stock)

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Digiode

USA . 576 parts In-Stock

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$0.130

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576

$0.130

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Vyrian

USA . 6,006 parts In-Stock

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6,006

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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-

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$0.317

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$0.156

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$0.127

3,000

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$0.317

$0.156

$0.127

Dan-Mar Components

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 250 parts In-Stock

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$0.113

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250

$0.113

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Corphita

USA . 1,618 parts In-Stock

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$0.123

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Component Stockers USA

USA . 4,205 parts In-Stock

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$0.140

100+ parts

$0.130

1k+ parts

$0.110

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4,205

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$0.110

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AZTECH Wire

Italy . 339 parts In-Stock

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$21.220

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339

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RC Electronics

USA . 39,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,056 parts In-Stock

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SupplyDigital Components

Austria . 7,945 parts In-Stock

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Problanco Electronics

Mexico . 7,758 parts In-Stock

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TANS Electronics

Latvia . 7,174 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,799 parts In-Stock

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Continental Prestige Electronics

USA . 5,386 parts In-Stock

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$0.113

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Microchip USA

USA . 4,227 parts In-Stock

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Kulean Microsystems

USA . 3,936 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 784 parts In-Stock

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784

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Overview

Experience the next level of efficiency and reliability with the MC74VHC1G132DF2G by Onsemi. Crafted with precision and expertise, this logic gate offers unmatched performance in various applications. From industrial automation to consumer electronics, this product delivers exceptional results with its fast propagation delay and high-quality construction. Trust Onsemi's reputation for excellence and choose the MC74VHC1G132DF2G for all your logic gate needs. Elevate your projects with the best in the market and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY materials make the package durable and resistant to damage, ensuring the longevity of the product.

Propagation Delay At Nominal Supply: 12.3 ns

Low propagation delay ensures fast signal processing and high-speed operation, making the product suitable for time-sensitive applications.

Surface Mount: YES

Surface mount capability makes installation and integration easier, especially in compact electronic devices or PCBs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with many common electronic systems and power supplies.

Power Supplies (V): 2/5.5

Wide operating voltage range from 2V to 5.5V provides flexibility in various power supply configurations and compatibility with different voltage levels.

Minimum Operating Temperature: -55 °C

Wide temperature range from -55 °C to 125°C ensures reliable performance in harsh environments or extreme temperatures.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems, making the product efficient and versatile.

Technical Specifications

Logic Gates MC74VHC1G132DF2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

12.3 ns

Propagation Delay (tpd):

19.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

MC74VHC1G132DF2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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