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SN74HC14DRE4

Texas Instruments

SN74HC14DRE4 by Texas Instruments

SN74HC14DRE4 by Texas Instruments is a CMOS logic gate with 6 functions and a propagation delay of 31 ns at 5V. It operates in industrial temperature range (-40 to 85 °C) and has a max supply voltage of 6V. Ideal for applications requiring Schmitt trigger functionality, such as signal conditioning circuits.

Median Price

$0.161

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 107,330 parts In-Stock

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Vyrian

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Sensible Micro Corp

USA . 3,840 parts In-Stock

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$0.161

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$0.150

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Digiode

USA . 1,152 parts In-Stock

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Nova Conductors

Japan . 70 parts In-Stock

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AZTECH Wire

Italy . 547 parts In-Stock

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$15.725

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Ampacity Inc.

Singapore . 1,394 parts In-Stock

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$17.000

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Corohmni

South Africa . 100 parts In-Stock

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$23.350

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Parana Technologies

USA . 2,126 parts In-Stock

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$27.100

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$32.227

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DigiPath Technology Company

USA . 903 parts In-Stock

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$29.840

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$29.840

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Advanced Electronics

New Zealand . 44 parts In-Stock

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$28.801

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$28.801

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ChromeModa Solutions

Germany . 3,001 parts In-Stock

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$30.449

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$24.968

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IDEA Electronic Components Group

UK . 859 parts In-Stock

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One Stop Electronics

USA . 924 parts In-Stock

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Semicontronic

India . 1,044 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Lucentia Tech

USA . 500 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Microchip USA

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Modulus Dynamics

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Overview

Experience cutting-edge technology with the Texas Instruments SN74HC14DRE4 Logic Gates. Manufactured by a trusted industry leader, this product offers unmatched quality and reliability. Ideal for a wide range of applications, these logic gates provide fast propagation delay and low power consumption. Unlock new possibilities in your projects with the value and benefits that the SN74HC14DRE4 brings to the table. Trust Texas Instruments for superior performance and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Propagation Delay At Nominal Supply: 31 ns

The low propagation delay ensures fast processing speed, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially for automated assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common 5V supply voltage allows for compatibility with many existing systems and components.

Power Supplies (V): 2/6

Support for multiple power supply voltages gives flexibility in designing circuits and allows for compatibility with a wider range of systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions and extended operation.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the logic gate efficient and reliable in various applications.

Technical Specifications

Logic Gates SN74HC14DRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

31 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74HC14DRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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