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MC74HC1G08DTT1G

Onsemi

MC74HC1G08DTT1G by Onsemi

MC74HC1G08DTT1G by Onsemi is a CMOS logic gate with 2 inputs, 90 ns propagation delay, and 155 ns tpd. Ideal for military applications, it operates b/w -55 to 125 °C with Vsup ranging from 2-6V. With a compact design of 3x1.5 mm and ICC of 25 mA, it's suitable for high-speed signal processing in harsh environments.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Adafruit Industries

USA . 500 parts In-Stock

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Arrow

USA . 734 parts In-Stock

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$0.402

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Verical

USA . 734 parts In-Stock

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Digiode

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Nova Conductors

Japan . 500 parts In-Stock

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Chip Stock

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Connector Distribution Corp

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Atlantic Semiconductor

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M&R Communications

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Prism Electronics

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Lantek

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TME

Poland . 495 parts In-Stock

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 289 parts In-Stock

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Semicontronic

India . 90 parts In-Stock

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Corohmni

South Africa . 437 parts In-Stock

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Corphita

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Argo Parts USA

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Component Stockers USA

USA . 14,360 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,010 parts In-Stock

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AZTECH Wire

Italy . 530 parts In-Stock

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GreenTree Electronics

Israel . 21,000 parts In-Stock

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Continental Prestige Electronics

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Brazil . 3,799 parts In-Stock

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Lucentia Tech

USA . 3,799 parts In-Stock

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Speed Components Ltd (Excess)

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Problanco Electronics

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UHIMA Technologies

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Bastille Electronics

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Kulean Microsystems

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Overview

Enhance your electronic projects with the MC74HC1G08DTT1G logic gate from Onsemi! Crafted with top-notch quality and precision, this product offers reliable performance and seamless integration. Perfect for a wide range of applications, this logic gate is designed to meet your needs with its efficient operation and durable build. Trust Onsemi's reputation for excellence in manufacturing and elevate your projects to new heights with the MC74HC1G08DTT1G. Experience the value and benefits this product brings to the table, making it a must-have for all your electronic endeavors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product more affordable.

Propagation Delay At Nominal Supply: 90 ns

The low propagation delay ensures fast signal processing and response times.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving.

No. of Inputs: 2

Having 2 inputs allows for more versatile logic operations.

Nominal Supply Voltage: 3V

Operates at a standard voltage level, making it compatible with a wide range of systems.

Load Capacitance: 50 pF

The low load capacitance ensures efficient performance and minimal power consumption.

Power Supplies: 2/6V

Supports dual power supplies, offering flexibility in voltage requirements.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, suitable for demanding environments.

Minimum Operating Temperature: -55 °C

Can also function in low-temperature conditions, providing versatility in usage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring reliable performance.

Technical Specifications

Logic Gates MC74HC1G08DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

90 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

MC74HC1G08DTT1G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-649-5586, 5962016495586

NIIN

016495586

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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