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MC10EP05DTR2

Onsemi

MC10EP05DTR2 by Onsemi

MC10EP05DTR2 by Onsemi is a logic gate with 0.32ns propagation delay at 3.3V, -5.2V power supply, and 0.27ns tpd. It is used in industrial applications for high-speed signal processing due to its ECL technology and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,095 parts In-Stock

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Digiode

USA . 812 parts In-Stock

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812

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AZTECH Wire

Italy . 589 parts In-Stock

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$16.690

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589

$16.690

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Microchip USA

USA . 5,688 parts In-Stock

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Problanco Electronics

Mexico . 5,587 parts In-Stock

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TANS Electronics

Latvia . 2,952 parts In-Stock

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Kulean Microsystems

USA . 2,147 parts In-Stock

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SupplyDigital Components

Austria . 1,601 parts In-Stock

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1,601

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UHIMA Technologies

Türkiye . 699 parts In-Stock

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699

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Corohmni

South Africa . 311 parts In-Stock

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Corphita

USA . 132 parts In-Stock

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Overview

Discover the cutting-edge MC10EP05DTR2 by Onsemi, a top-tier Logic Gates manufacturer. This high-quality product is designed to provide lightning-fast propagation delay at nominal supply, making it perfect for a wide range of applications. With its reliable performance and durable package body material, this Logic Gates component offers unparalleled value and benefits to customers. Upgrade your projects with the MC10EP05DTR2 and experience the advantages of superior technology in action.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable, lightweight, and cost-effective, making the product suitable for various applications.

Propagation Delay At Nominal Supply: 0.32 ns

The low propagation delay ensures quick signal processing, making the product ideal for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is a common and widely available voltage level, making the product compatible with various systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the product can withstand harsh environmental conditions, increasing its reliability and longevity.

Technology: ECL

ECL technology offers high-speed performance with low power consumption, making the product suitable for high-performance applications.

Technical Specifications

Logic Gates MC10EP05DTR2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

10E

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

29 mA

Propagation Delay At Nominal Supply:

.32 ns

Propagation Delay (tpd):

.27 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

MC10EP05DTR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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