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MC10E104FNR2G

Onsemi

MC10E104FNR2G by Onsemi

MC10E104FNR2G by Onsemi is a Logic Gates chip with 5 functions, 2 inputs, and 1ns propagation delay at 5V. It operates in temperatures from 0 to 85 °C and has a max supply voltage of 5.7V. Ideal for high-speed applications requiring fast signal processing in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,040 parts In-Stock

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4,040

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Digiode

USA . 1,891 parts In-Stock

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1,891

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$12.801

100+ parts

$11.649

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$10.497

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450

$12.801

$11.649

$10.497

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AZTECH Wire

Italy . 568 parts In-Stock

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$22.060

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568

$22.060

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Component Stockers USA

USA . 749 parts In-Stock

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$99.990

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749

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,976 parts In-Stock

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28,976

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Problanco Electronics

Mexico . 7,608 parts In-Stock

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7,608

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Microchip USA

USA . 5,688 parts In-Stock

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5,688

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SupplyDigital Components

Austria . 5,361 parts In-Stock

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5,361

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Kulean Microsystems

USA . 2,263 parts In-Stock

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TANS Electronics

Latvia . 1,395 parts In-Stock

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1,395

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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651

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Corphita

USA . 435 parts In-Stock

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Corohmni

South Africa . 432 parts In-Stock

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Overview

Discover the power of the MC10E104FNR2G by Onsemi, a top-quality logic gate perfect for a wide range of applications. Onsemi's reputation for excellence ensures that this product delivers unmatched performance and reliability. With lightning-fast propagation delay and multiple functions in one package, this chip carrier offers exceptional value to customers seeking high-speed data processing solutions. Whether you're working on telecommunications, data communications, or industrial automation projects, the MC10E104FNR2G will exceed your expectations with its superior output characteristics and efficient design. Elevate your technology with Onsemi's cutting-edge logic gates today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 1 ns

The low propagation delay ensures quick response time in processing signals, making the product efficient for high-speed applications.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage of 5V makes the product compatible with standard electronic systems.

Technology: ECL

The ECL technology offers high-speed operation and low power consumption, making it suitable for advanced applications that require efficient and fast signal processing.

Technical Specifications

Logic Gates MC10E104FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

10E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

5

No. of Inputs:

2

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

46 mA

Propagation Delay At Nominal Supply:

1 ns

Propagation Delay (tpd):

.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.505 mm

Trade Compliance

MC10E104FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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