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M74VHC1GT04DFT3G

Onsemi

M74VHC1GT04DFT3G by Onsemi

M74VHC1GT04DFT3G by Onsemi is a CMOS logic gate with 5 terminals in a small outline package. It operates at supply voltages from 2V to 5.5V, with a load capacitance of 50pF and propagation delay of 14.5ns. Ideal for military-grade applications requiring high-speed signal processing in compact spaces.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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AZTECH Wire

Italy . 489 parts In-Stock

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Kulean Microsystems

USA . 4,120 parts In-Stock

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Problanco Electronics

Mexico . 2,643 parts In-Stock

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TANS Electronics

Latvia . 2,307 parts In-Stock

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Overview

Discover the versatile M74VHC1GT04DFT3G by Onsemi, a high-quality logic gate that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this product is perfect for a wide range of applications. With its compact design and advanced technology, this logic gate provides customers with exceptional value, efficiency, and convenience. Experience seamless operation and enhanced functionality with the M74VHC1GT04DFT3G, the ideal solution for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a standard voltage supply for ease of integration into existing systems.

Maximum Seated Height: 1.1 mm

Low profile design saves space and allows for compact circuit board layouts.

Propagation Delay (tpd): 14.5 ns

Provides fast response times for efficient signal processing.

Temperature Grade: MILITARY

Suitable for use in harsh environmental conditions and high temperature applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without compromising performance.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates M74VHC1GT04DFT3G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

14.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

M74VHC1GT04DFT3G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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