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LV8771VH-MPB-H

Onsemi

LV8771VH-MPB-H by Onsemi

LV8771VH-MPB-H by Onsemi is a Motion Control IC with 24V supply voltage, BICMOS technology, and 28 terminals. It operates b/w -20 °C to 85°C and has a max supply current of 3mA. Ideal for applications requiring precise motion control in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,860 parts In-Stock

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Digiode

USA . 221 parts In-Stock

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AZTECH Wire

Italy . 1,161 parts In-Stock

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$18.680

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Component Stockers USA

USA . 201 parts In-Stock

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$99.990

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201

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Kulean Microsystems

USA . 6,696 parts In-Stock

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SupplyDigital Components

Austria . 6,284 parts In-Stock

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TANS Electronics

Latvia . 5,205 parts In-Stock

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Corphita

USA . 2,226 parts In-Stock

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Problanco Electronics

Mexico . 1,445 parts In-Stock

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UHIMA Technologies

Türkiye . 817 parts In-Stock

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Microchip USA

USA . 420 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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Overview

Unlock seamless motion control with the LV8771VH-MPB-H by Onsemi. Crafted with precision and reliability, this cutting-edge product offers unparalleled performance in a compact package. Ideal for a wide range of applications, this motion control IC boasts advanced features that elevate user experience to new heights. Trust Onsemi's expertise and innovation to deliver superior quality and value to your projects. Elevate your designs with the LV8771VH-MPB-H and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides a lightweight and durable construction, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Nominal Supply Voltage (Vsup): 24 V

Operates at a standard 24V supply voltage, compatible with many industrial systems.

No. of Terminals: 28

Provides a sufficient number of terminals for connecting to external devices and peripherals.

Maximum Operating Temperature: 85 °C

Can operate at relatively high temperatures, suitable for industrial environments.

Technology: BICMOS

Utilizes BICMOS technology for efficient power management and performance.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that the product has moderate sensitivity to moisture, making it suitable for typical handling and storage conditions.

Technical Specifications

Motion Control ICs LV8771VH-MPB-H attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SOP28/36,.3,32

Power Supplies (V):

24

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

3 mA

Nominal Supply Voltage (Vsup):

24 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

LV8771VH-MPB-H Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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