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LV51133T

Onsemi

LV51133T by Onsemi

LV51133T by Onsemi is a Power Management IC with 8 terminals in a small outline, thin profile package. It operates b/w -30 °C to 85°C and supports supply voltages from 6V to 8V. Ideal for power supply support circuits, this CMOS technology IC is surface mountable and has a square package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,761 parts In-Stock

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Digiode

USA . 1,454 parts In-Stock

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1,454

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TANS Electronics

Latvia . 7,775 parts In-Stock

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Problanco Electronics

Mexico . 6,778 parts In-Stock

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Kulean Microsystems

USA . 4,166 parts In-Stock

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SupplyDigital Components

Austria . 3,987 parts In-Stock

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Corphita

USA . 2,453 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Overview

Enhance your power management capabilities with the LV51133T from Onsemi. Crafted with precision and quality in mind, this Power Management IC offers a range of benefits for various applications. Whether you're looking to optimize power supply support circuits or improve overall efficiency, this small outline, thin profile IC delivers superior performance. Trust in Onsemi's reputation for excellence and elevate your projects with the LV51133T today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and durable, making the product suitable for a wide range of applications.

Surface Mount: YES

The surface mount design allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Package Shape: SQUARE

The square shape of the package provides stability and efficient use of space in the circuit design.

No. of Terminals: 8

Having 8 terminals allows for a variety of input and output connections, making the product versatile for different power management requirements.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures reliability in cold environments, expanding the range of applications where this product can be used.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in installation and connectivity options, making the product more adaptable to various circuit layouts.

Width (mm): 3 mm

The compact width of 3mm allows for space-saving integration in tight PCB layouts, ideal for applications where size is a concern.

Minimum Supply Voltage (Vsup): 6 V

The minimum supply voltage of 6V ensures compatibility with a wide range of power sources, making the product versatile for different power supply applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and performance of the power management IC.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections, ensuring reliable electrical contact and stability in the circuit.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65mm allows for high-density mounting on PCBs, enabling efficient use of space and reducing signal interference.

Maximum Supply Voltage (Vsup): 8 V

The maximum supply voltage of 8V provides a safe operating range for the power management IC, protecting it from overvoltage conditions and ensuring longevity.

Technical Specifications

Power Management ICs LV51133T attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

CHARGE AND DISCHARGE DETECTION VOLTAGE IS 4.25 AND 2.8V

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

8 V

Minimum Supply Voltage (Vsup):

6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

3 mm

Trade Compliance

LV51133T Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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