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LV51131T

Onsemi

LV51131T by Onsemi

LV51131T by Onsemi is a Power Management IC with 1.5/10V power supplies, 8 terminals, and 0.013mA max supply current. It is used in applications requiring CMOS technology, operating b/w -30 to 85 °C, featuring a small outline package for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,339 parts In-Stock

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Digiode

USA . 912 parts In-Stock

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Problanco Electronics

Mexico . 7,709 parts In-Stock

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TANS Electronics

Latvia . 5,517 parts In-Stock

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Kulean Microsystems

USA . 4,172 parts In-Stock

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SupplyDigital Components

Austria . 3,333 parts In-Stock

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Corphita

USA . 717 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the LV51131T by Onsemi. As a leading manufacturer in power management ICs, Onsemi delivers top-notch quality and reliability. Ideal for a wide range of applications, this product offers unparalleled value with its efficient power supplies and advanced CMOS technology. Experience the benefits of smooth operation and optimized energy consumption with the LV51131T. Trust Onsemi to provide innovative solutions for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the Power Management IC, ensuring durability and long-term performance.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and reducing manufacturing costs.

Power Supplies (V): 1.5/10

This Power Management IC supports a wide range of power supplies from 1.5V to 10V, making it versatile and compatible with various systems.

No. of Terminals: 8

Having 8 terminals allows for more connectivity options and configurations, increasing the flexibility of the Power Management IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this Power Management IC can reliably operate in a variety of environments, enhancing its usability.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and good noise immunity, making this Power Management IC efficient and reliable.

Terminal Pitch: 0.635 mm

The small terminal pitch allows for compact and space-efficient design, enabling the Power Management IC to be used in tight layout requirements.

Technical Specifications

Power Management ICs LV51131T attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

1.5/10

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.013 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

LV51131T Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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