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LV51133T-TLM-E

Onsemi

LV51133T-TLM-E by Onsemi

LV51133T-TLM-E by Onsemi is a Power Management IC with 6/8V power supplies, 8 terminals, and CMOS technology. It features a small outline package shape suitable for surface mount applications. Operating b/w -30 to 85 °C, it is ideal for various electronic devices requiring efficient power management.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 4,184 parts In-Stock

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Digiode

USA . 219 parts In-Stock

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AZTECH Wire

Italy . 67 parts In-Stock

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$10.770

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Component Stockers USA

USA . 244 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,275 parts In-Stock

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Microchip USA

USA . 6,177 parts In-Stock

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Kulean Microsystems

USA . 4,372 parts In-Stock

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Corphita

USA . 2,256 parts In-Stock

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TANS Electronics

Latvia . 2,078 parts In-Stock

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SupplyDigital Components

Austria . 1,414 parts In-Stock

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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Overview

Upgrade your power management solutions with the LV51133T-TLM-E by Onsemi. Designed with high-quality materials and advanced CMOS technology, this power management IC offers unparalleled performance and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, this versatile IC is the perfect choice for your applications. Experience the value of efficient power supplies and enhanced functionality with the LV51133T-TLM-E. Choose Onsemi for superior quality and innovation in power management ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the power management IC, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

Enables space-efficient placement on the circuit board, optimizing overall design and layout.

Power Supplies (V): 6/8

Supports a wide range of compatible power supply voltages, increasing flexibility for various applications.

No. of Terminals: 8

Provides multiple connection points for interfacing with other components, enhancing versatility in circuit integration.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Facilitates compact and space-saving designs, ideal for applications with limited board space.

Maximum Operating Temperature: 85 °C

Ensures stable performance even under high-temperature conditions, enhancing reliability in demanding environments.

Minimum Operating Temperature: -30 °C

Maintains functionality in cold environments, allowing for operation in a wide range of temperature conditions.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Provides excellent solderability and conductivity for secure and reliable connections during assembly.

Terminal Position: DUAL

Offers multiple terminal positions for increased flexibility in circuit connection and layout options.

Maximum Supply Current (Isup): 0.013 mA

Optimizes power efficiency by consuming minimal supply current, reducing energy consumption and heat generation.

Technology: CMOS

Utilizes CMOS technology for efficient power management, delivering high performance with low power consumption.

Terminal Form: GULL WING

Facilitates easy and secure soldering during assembly, ensuring a reliable connection for improved performance.

Terminal Pitch: 0.635 mm

Provides a fine pitch for compact layout design, enabling high-density integration of components on the circuit board.

Moisture Sensitivity Level (MSL): 3

Indicates a moderate level of moisture sensitivity, suitable for a wide range of environmental conditions and applications.

Technical Specifications

Power Management ICs LV51133T-TLM-E attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

6/8

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.013 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

LV51133T-TLM-E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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