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LV51137T

Onsemi

LV51137T by Onsemi

LV51137T by Onsemi is a Power Management IC with 8 terminals in a small outline package. It operates b/w -30 °C to 85°C, suitable for power supply support circuits. The IC features CMOS technology, Gull Wing terminals, and a square-shaped plastic/epoxy body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,575 parts In-Stock

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Digiode

USA . 501 parts In-Stock

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501

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TANS Electronics

Latvia . 6,254 parts In-Stock

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6,254

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Problanco Electronics

Mexico . 3,067 parts In-Stock

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SupplyDigital Components

Austria . 2,255 parts In-Stock

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Kulean Microsystems

USA . 1,559 parts In-Stock

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Corphita

USA . 1,343 parts In-Stock

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UHIMA Technologies

Türkiye . 837 parts In-Stock

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837

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Corohmni

South Africa . 452 parts In-Stock

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Overview

Experience the reliability and efficiency of the LV51137T by Onsemi, a power management IC designed to meet your needs. With a reputation for exceptional quality and innovation, Onsemi delivers top-notch products that exceed expectations. The LV51137T is perfect for a variety of applications, offering unmatched value and performance. Trust Onsemi to provide you with the best solutions for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the Power Management ICs easy to handle and long-lasting.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying the assembly process.

Package Shape: SQUARE

The square shape provides a compact footprint, making it suitable for designs with limited space constraints.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options, allowing for versatile integration into various circuit designs.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, these Power Management ICs can withstand demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures the Power Management ICs can function reliably even in cold environments.

Terminal Position: DUAL

Dual terminal positions offer flexibility in installation and enable secure connections for reliable operation.

Maximum Seated Height: 1.1 mm

The low profile design with a maximum seated height of 1.1 mm allows for compact and space-saving installations.

Width (mm): 3 mm

The small width of 3 mm enables the Power Management ICs to fit into tight spaces within electronic devices.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

These Power Management ICs are specifically designed to support power supply functions, ensuring efficient power distribution within circuits.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the Power Management ICs energy-efficient and reliable.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections, enhancing the durability and stability of the Power Management ICs.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm allows for high-density mounting, enabling more components to be packed closely together on the PCB.

Technical Specifications

Power Management ICs LV51137T attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

CHARGE AND DISCHARGE DETECTION VOLTAGE IS 4.21 AND 2.3V

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.1 mm

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

3 mm

Trade Compliance

LV51137T Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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